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4196 Publications
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  • La singolarità di un caso accademico interdisciplinare italiano: prospettive per una valutazione equa e sostenibile di ricerche antropolinguistiche di progressiva rilevanza filologica in euro-zona

    In questa monografia si indicano le conseguenze di una estrema oggettiva difficoltà, in particolare presso la comunità accademica italiana, ad affrontare i problemi che emergono nella prassi di valutazione, derivati da entropia comunicativa, confusione informativa, complicazione paradossale nell'applicazione di criteri di giudizio come emergono nella compilazione della modulistica attuale. Si analizza uno specifico caso accademico italiano effettivamente paradossale', evitando ogni sfumatu...

    Regenerative GaAs MMIC Frequency Dividers for 28 and 14 GHz

    The design and characterization of two regenerative frequency dividers based on a commercial foundry GaAs HEMT-process are described. The dividers are intended to be used in a 56 GHz phase locked frequency generator. The main goal is to design dividers that have high input sensitivity and low DC-power consumption. The dividers are regenerative and consist of a resistive mixer followed by a frequency selective amplifier. The regenerative divider, compared to a digital divider, consumes less DC...

    A Low Voltage 12-GHz Silicon-Germanium Static frequency divider with a Selectable Division Ratio

    An integrated 12-GHz static frequency divider with a selectable division ratio (16/1, 64/1) realised in a Silicon Germanium technology dedicated for high volume production, is presented. It operates at low bias voltage (2.7-3.6V) providing balanced output signals on 50-ohm loads. The chosen architecture, the adopted design approach and used technology led to a good trade-off among maximum input frequency, input sensitivity, noise floor, power consumption, division ratioes and die size compare...

    Design techniques for linear requirements for MMIC power amplifiers

    Measurements and simulations on MESFET’s and GaAs HBT’s shows that intermodulation suppression and efficiency can be greatly improved by applying the correct loads not only to the fundamental but also to at least the first two harmonics and the low frequency mixing term. At 40 dBc IM3 the efficiency for the MESFET is increased from 20 to 30 % and in the case of the GaAs HBT the improvement is from 10 to 17 %.

    A monolithic HEMT distributed amplifier using a low cost spacer technology

    The design, fabrication, and performance of a monolithic HEMT distributed amplifier are described. Over the 0.5 -30 GHz frequency range a gain of 9.5 ±0.7 dB has been achieved. The HEMT gate process is based on a spacer technology without using electron beam lithography. Thus, the process is suitable for high volume low cost production of HEMT MMICs.
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