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4159 Publications
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  • GAAS Microwave offset gate self-aligned MESFETs and their applications

    The present paper is devoted to microwave transistors, developed in SRPC "Istok". Design, fabrication and characteristics of power and low noise GaAs MESFET's and their applications are presented in this paper. The low noise MESFETs exhibit a noise figure of 1.2 dB at 15 GHz and power MESFET's show an output power density of 0.5 W/mm, with a typical power-added efficiency of 35% and thermal resistance of 10-12 °C/W for a MESFET with a total gate width of 4mm.

    Dual Band Monolithic AGC Amplifier for Space Applications based on a commercial 0.2 µm PHEMT Technology

    This paper reports the design and measurement of a dual band monolithic AGC amplifier to be used in transmit/receive modules for Telemetry,Tracking and Control (TTC)of satellite systems.The amplifier is also included in a multifunction Monolithic Microwave Integrated Circuit,MMIC,containing frequency converters.The block diagram of this chip is shown in figure 1.The goal of the work is to reduce the number,size, and consequently,the cost of the circuitry actually in use, whilst maintaining pe...

    Collaborative Research Practices and Shared Infrastructures for Humanities Computing

    The volume collect the proceedings of the 2nd Annual Conference of the Italian Association for Digital Humanities (Aiucd 2013), which took place at the Department of Information Engineering of the University of Padua, 11-12 December 2013. The general theme of Aiucd 2013 was “Collaborative Research Practices and Shared Infrastructures for Humanities Computing” so we particularly welcomed submissions on interdisciplinary work and new developments in the field, encouraging proposals relating...

    Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

    We report on the technology and microwave characterization of AlGaN/GaN power HEMTs on SiC substrate. DC and S-parameter are discussed, together with load-pull results on devices up to 4mm gate width. A power density of 5.2 W/mm is obtained for devices up to 2 mm gate width. The maximum power level achieved is 13.8 W at 2 GHz.

    Design optimisation of ultra-short gate HEMTS using MONTE CARLO simulation

    By using a Monte Carlo simulator the static and dynamic characteristics of a 50 nm gate AlInAs/GaInAs δ−doped HEMTs are investigated. The Monte Carlo model includes some important effects that are indis-pensable when trying to reproduce the real behaviour of the devices, such as degeneracy, presence of surface charges, T-shape of the gate, presence of dielectrics and contact resistances. Among the large quantity of design parameters that enter into the fabrication of the devices, we have stud...
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