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High permittivity dielectrics on Ge for end of Roadmap application

Title
High permittivity dielectrics on Ge for end of Roadmap application
Funding
RCUK | EPSRC
Contract (GA) number
EP/I012966/1
Start Date
2011/04/01
End Date
2014/09/30
Open Access mandate
no
Organizations
Liverpool John Moores University
More information
-

 

  • Time-dependent variation: A new defect-based prediction methodology

    Zhang, JF; Duan, M; Ji, Z; Zhang, WD; Kaczer, B; Schram, T; Ritzenthaler, R; Thean, G; Groseneken, G; Asenov, A
    Projects: RCUK | High permittivity dielectrics on Ge for end of Roadmap application (EP/I012966/1)
    For the first time, different impacts of as-grown and generated defects on nm-sized devices are demonstrated. As-grown hole traps are responsible for WDF, which increases with Vg_op and tw. The generated defects are substantial, but do not contribute to WDF and consequently are not detected by RTN. The non-discharging component follows the same model as that for large devices: the `AG' model. Based on this defect framework, a new methodology is proposed for test engineers to predict the long ...

    AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction

    Ma, J; Zhang, WD; Zhang, JF; Ji, Z; Benbakhti, B; Franco, J; Mitard, J; Witters, L; Collaert, N; Groeseneken, G
    Projects: RCUK | High permittivity dielectrics on Ge for end of Roadmap application (EP/I012966/1)
    For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress.

    Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs

    Ma, J; Zhang, JF; Ji, Z; Benbakhti, B; Zhang, WD; Mitard, J; Kaczer, B; Groeseneken, G; Hall, S; Robertson, J; Chalker, P
    Projects: RCUK | High permittivity dielectrics on Ge for end of Roadmap application (EP/I012966/1)
    The high hole mobility of Ge makes it a strong candidate for end of roadmap pMOSFETs and low interface states have been achieved for the Al2O3-GeO2-Ge gate-stack. This structure, however, suffers from significant negative bias temperature instability (NBTI), dominated by positive charge (PC) in Al2O3/GeO2. An in-depth understanding of the PCs will assist in the minimization of NBTI and the defect energy distribution will provide valuable information. The energy distribution also provides the ...
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