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High permittivity dielectrics on Ge for end of Roadmap application

Title
High permittivity dielectrics on Ge for end of Roadmap application
Funding
RCUK | EPSRC
Contract (GA) number
EP/I012966/1
Start Date
2011/04/01
End Date
2014/09/30
Open Access mandate
no
Organizations
LJMU
More information
-

 

  • Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs

    Ma, J; Zhang, JF; Ji, Z; Benbakhti, B; Zhang, WD; Mitard, J; Kaczer, B; Groeseneken, G; Hall, S; Robertson, J; Chalker, P
    Projects: RCUK | High permittivity dielectrics on Ge for end of Roadmap application (EP/I012966/1)
    The high hole mobility of Ge makes it a strong candidate for end of roadmap pMOSFETs and low interface states have been achieved for the Al2O3-GeO2-Ge gate-stack. This structure, however, suffers from significant negative bias temperature instability (NBTI), dominated by positive charge (PC) in Al2O3/GeO2. An in-depth understanding of the PCs will assist in the minimization of NBTI and the defect energy distribution will provide valuable information. The energy distribution also provides the ...
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