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Yang, L.; Watling, J. R.; Asenov, A.; Barken, J. R.; Roy, S. (2004)
Publisher: Institute of Electrical and Electronics Engineers
Languages: English
Types: Other
Subjects: TK
Using comprehensive device simulations, performance enhancement of sub-100nm strained Si MOSFETs has been investigated. Circuit behavior of conventional Si, strained Si, conventional Si SOI and strained SOI ring oscillators has been assessed.
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