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Zhang, T; Spangenberg, M; Greig, D; Takahashi, N; Shen, T; Matthew, JAD; Cornelius, S; Rendall, M; Seddon, SE
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC, other

Classified by OpenAIRE into

arxiv: Condensed Matter::Materials Science, Condensed Matter::Superconductivity
Identifiers:doi:10.1063/1.1345820
Thin epitaxial Fe films have been grown on vicinal GaAs(001) substrates and their remanent magnetic properties and the degree of substrate atom diffusion investigated using synchrotron-based photoelectron spectroscopy. The vicinal Fe films, though exhibiting greater As diffusion than their singular homologues, displayed better film quality both from the structural and the magnetic points of view. The spin-resolved valence spectra of the vicinal films resemble those for crystalline bulk Fe at lower film thicknesses than for singular films.
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    • 1 E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts ~Clarendon, Oxford, U.K., 1988!.
    • 2 S. Datta and B. Das, Appl. Phys. Lett. 56, 665 ~1990!.
    • 3 S. A. Chambers, F. Xu, H. W. Chen, I. M. Vitomirov, S. B. Anderson, and J. H. Weaver, Phys. Rev. B 34, 6605 ~1986!.
    • 4 A. Filipe and A. Schuhl, J. Appl. Phys. 81, 4359 ~1997!.
    • 5 M. Zo¨lfl, M. Brockmann, M. Ko¨hler, S. Kreuzer, T. Schweinbo¨ck, S. Miethaner, F. Bensch, and G. Bayreuther, J. Magn. Magn. Mater. 175, 16 ~1997!.
    • 6 M. Brockmann, M. Zo¨lfl, S. Miethaner, and G. Bayreuther, J. Magn. Magn. Mater. 198-199, 384 ~1999!.
    • 7 T. Leeb, M. Brockmann, F. Bensch, S. Miethaner, and M. Bayeuther, J. Appl. Phys. 85, 4964 ~1999!.
    • 8 B. A. Joyce, J. H. Neave, J. Zhang, D. D. Vvedensky, S. Clarke, K. J. Hugill, T. Shitara, and A. K. Myers-Beaghton, Semicond. Sci. Technol. 5, 1147 ~1990!.
    • 9 T. Kawamura, J. Maruta, and A. Ishii, Jpn. J. Appl. Phys., Part 1 39, 4376 ~2000!.
    • 10 J. M. Gaines, P. M. Petroff, H. Kroemer, R. J. Simes, R. S. Geels, and J. H. English, J. Vac. Sci. Technol. B 6, 1373 ~1998!.
    • 11 M. Spangenberg, T. Zhang, N. Takahashi, T.-H. Shen, D. Greig, S. Cornelius, E. A. Seddon, and J. A. D. Matthew ~unpublished!.
    • 12 B. Sinkovic, E. Shekel, and S. L. Hulbert, Phys. Rev. B 52, R8696 ~1995!.
    • 13 Y. B. Xu, D. Greig, E. A. Seddon, and J. A. D. Matthew, Phys. Rev. B 55, 11442 ~1997!.
    • 14 M. Gester, C. Daboo, R. J. Hicken, S. J. Gray, A. Erole, and J. A. Bland, J. Appl. Phys. 80, 347 ~1996!.
    • 15 V. C. Moruzzi, J. F. Janak, and A. R. Williams, Calculated Electronic Properties of Metals ~Pergamon, New York, 1978!.
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