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Lei, H.; Stevens, B.J.; Fry, P.W.; Babazadeh, N.; Ternent, G.; Childs, D.; Groom, K.M. (2016)
Publisher: IOP Publishing
Languages: English
Types: Article
Subjects:
We demonstrate operation of a GaAs-based self-aligned stripe (SAS) distributed feedback (DFB) laser. In this structure, a first order GaInP/GaAs index-coupled DFB grating is built within the p-doped AlGaAs layer between the active region and the n-doped GaInP opto-electronic confinement layer of a SAS laser structure. In this process no Al-containing layers are exposed to atmosphere prior to overgrowth. The use of AlGaAs cladding affords the luxury of full flexibility in upper cladding design, which proved necessary due to limitations imposed by the grating infill and overgrowth with the GaInP current block layer. Resultant devices exhibit single-mode lasing with high side-mode-suppression of >40 dB over the temperature range 20 °C–70 °C. The experimentally determined optical profile and grating confinement correlate well with those simulated using Fimmwave.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • [1] Muller M, Klopf F, Kamp M, Reithmaier J P and Forchel A 2002 Wide range tunable laterally coupled distributedfeedback lasers based on InGaAs-GaAs quantum dots IEEE Photonics Technol. Lett. 14 1246-8
    • [2] Stevens B J, Groom K M, Roberts J S, Fry P W, Childs D T D and Hogg R A 2010 Distributed feedback laser employing buried GaAs/InGaP index-coupled grating Electron. Lett. 46 1076-7
    • [3] Crump P, Brox O, Bugge F, Fricke J, Schultz C, Spreemann M, Sumpf B, Wenzel H and Erbert G 2012 High-power, highefficiency monolithic edge-emitting GaAs based lasers with narrow spectral widths Advances in Semiconductor Lasers (Semiconductor and Semimetals vol 86) ed J J Colemann et al (Amsterdam: Elsevier) ch 2
    • [4] Nido M, Komazaki I, Kobayashi K, Endo K, Ueno M, Kamejima T and Suzuki T 1987 AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth IEEE J. Quantum. Electron. 23 720-4
    • [5] Yeh N T, Liu W S, Chen S H, Chiu P C and Chyi J I 2002 InAs/ GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy Appl. Phys. Lett. 80 535-7
    • [6] Groom K M, Stevens B J, Assamoi P J, Roberts J S, Hugues M, Childs D T D, Alexander R R, Hopkinson M, Helmy, Amr S and Hogg R A 2009 Quantum well and dot selfaligned stripe lasers utilizing an InGaP optoelectronic confinement layer IEEE J. Sel. Top. Quantum Electron. 15 819-27
    • [7] Tu K Y, Tamir T and Lee H 1993 Multiple-scattering theory of wave diffraction by superposed volume gratings J. Opt. Soc. Am. A 7 1421-35
    • [8] Kjellberg T, Nilsson S, Klinga T, Broberg B and Schatz R 1993 Investigation on the spectral characteristics of DFB lasers with different grating configurations made by electron-beam lithography J. Lightwave Technol. 11 1405-15
  • No related research data.
  • Discovered through pilot similarity algorithms. Send us your feedback.

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