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Buca, D; Wirths, S; Stange, D; Tiedemann, AT; Mussler, G; Ikonic, Z; Chiussi, S; Hartmann, JM; Grützmacher, D; Mantl, S (2014)
Publisher: IEEE Computer Society
Languages: English
Types: Other
Subjects:
This new class of group IV semiconductors, i.e. GeSn and SiGeSn, will enable novel integrated photonic and electronic devices due to the direct gap, the feasibility to tune the gap energies and the band alignments. Remarkable progress has been achieved in the growth of high quality heterostructures, high-k gate stacks and metal contact formation required for future nanodevices.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • [1] S. Wirths et al., Appl. Phys. Lett. 102, 192103 (2013) [2] G. Han et al., ECS Transactions, 50, (9), 943 (2012).
    • [3] Y. Yang et al., IEDM, 2012, 16.3.1-4 [4] S. Mantl et al., Proc. ULIS 2013 [5] B. Vincent et al., Appl. Phys. Lett., 99, 152103 (2011), [6] J.Xie et al., Chem. Mater., 22, 3779 (2010) [7] M. Oehme et al., Journal of Crystal Growth (2013) [8] S. Wirths et al., ECS J. Solid State Sci. Technol., 2(5), N99-N102 (2013)
    • [9] R. A. Minamisawa et al., Nature comm., 3, 1096, (2012).
    • [10] M. J. Süess et al., Nature Photonics, 7, 466-472 (2013) [11] S. Wirths et al., Appl. Phys. Lett. 103, 192110 (2013)
  • No related research data.
  • Discovered through pilot similarity algorithms. Send us your feedback.

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