LOGIN TO YOUR ACCOUNT

Username
Password
Remember Me
Or use your Academic/Social account:

CREATE AN ACCOUNT

Or use your Academic/Social account:

Congratulations!

You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.

Important!

Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message

CREATE AN ACCOUNT

Name:
Username:
Password:
Verify Password:
E-mail:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:
fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Koutsogeorgis, DC; Mastio, EA; Cranton, WM; Thomas, CB (2001)
Publisher: Elsevier (not including Cell Press)
Languages: English
Types: Article
Subjects:
Pulsed KrF (248-nm) laser annealing was investigated as a post-deposition process for RF sputtered ZnS:Mn phosphor layers used in laterally emitting thin film electroluminescent (LETFEL) displays. LETFEL devices consist of a phosphor layer sandwiched between two insulating thin films (Y2O3), grown onto silicon substrates patterned with micro-mirrors (SiO2). The micro mirror structure permits surface viewing by reflecting laterally emitted light due to internal waveguiding effects. Laser irradiation of the uncoated phosphor layer was performed using KrF excimer 248-nm laser pulses of 20 ns under an argon overpressure of 10.34 bars to limit laser ablation. The influence of the laser irradiation fluence on the LETFEL performance was investigated from 0.3 to 1.5 J/cm2. In this paper, we have reported the brightness-voltage characteristics of laser annealed, non-annealed and thermally annealed devices at 500°C for 1 h. It is shown that the onset for light emission (threshold voltage) decreases with laser annealing. Using this novel method of annealing, the brightness of LETFEL devices is observed to increase with increasing laser fluence.
  • No references.
  • No related research data.
  • No similar publications.

Share - Bookmark

Cite this article