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Eblabla, Abdalla; Li, Xu; Wallis, David J.; Guiney, Ivor; Elgaid, Khaled (2016)
Languages: English
Types: Other
Subjects:
This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance. Enhancement in short circuit current gain (fT) and maximum frequency of oscillation (fMAX) was observed in the HEMT with a 1 nm AlN spacer, where (fT) and (fMAX) were increased from 47 GHz to 55 GHz and 79 GHz to 121 GHz, respectively. Small-signal-modelling analysis was carried out to study this improvement in performance. We found that the AlN interlayer played a crucial role in reducing the gate-source capacitance, Cgs, by 36 % and delay, τ, by 20 % under the gate, as a result of an increase in mobility and a reduction in trap-related effects.

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