Remember Me
Or use your Academic/Social account:


Or use your Academic/Social account:


You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.


Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message


Verify Password:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:
fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Whall, Terry E.; Mattey, Nevil L.; Plews, Andrew D.; Phillips, P. J. (Peter J.); Mironov, O. A.; Nicholas, R. J.; Kearney, M. J. (1994)
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC, TK
Measurements of Shubnikov de Haas oscillations in the temperature range 0.3–2 K have been used to determine an effective mass of 0.23 m0 in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. This value is in agreement with theoretical predictions and with that obtained from cyclotron resonance measurements. The ratio of the transport time to the quantum lifetime is found to be 0.8. It is concluded that the 4 K hole mobility of 11 000 cm2 V−1 s−1 at a carrier sheet density of 2.2×1011 cm−2 is limited by interface roughness and short-range interface charge scattering.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • 'J. C Hensel and G. Feher, Phys. Rev. 129, 1041 (1963).
    • Lynch, and K Baldwin, Appl. Phys. Lett. 45, 1231 (1984).
    • Phys. Lett. 54, 2701 (1989).
    • 4J. P. Cheng, V. P. Kesan, D. A. Grutzmacher, T. 0. Sedgwick, and J. A.
    • Ott, Appl. Phys. Lett. 62, 1522 (1993).
    • 'I? F. Fang, A. B. Fowler, and A. Hartsein, Phys. Rev. B 16, 4446 (1977).
    • “A. Hartstein and F. E Fang, Phys. Rev. B 18, 5502 (1978).
    • 7T. E. Whall, D. W. Smith, A. D. Plews, R. A. Kubiak, P. J. Phillips, and E. H. C Parker, Semicond. Sci. Technol. 8, 615 (1993).
    • sC. J. Emeleus, T. E. Whall, D. W. Smith, R. A. Kubiak, E. H. C Parker, and M. J. Kearney, J. Appl. Phys. 73, 3852 (1993).
    • 'A. Houghton, J. R. Senna, and S. C. Ying, Phys. Rev. B 25, 2196 (1982).
    • 'OP.T. Coleridge, R. Stoner, and R. Fletcher, Phys. Rev. B 39, 1120 (1989).
    • 'r D. Schoenberg, Magnetic Oscillations in Metals (Cambridge University Press, Cambridge, 1984).
    • “A GoId, Phys. Rev. B 38, 10798 (1988).
    • r3U. Bockelmann, P. Heirgeist, G. Abstreiter, G .Weimann, and W. Sclapp, Surf. Sci. 229, 398 (1990).
    • 14A: Isihara and L. Ioriafti, Physica B 113, 42 (1982).
    • “F. E Fang, I? J. Wang, B. S. Meyerson, J. J. Nocera, and K. E. Ismail, Surf. Sci. 263, 175 (1992).
    • 16E.Glaser>J, M. Trombetta, T. A. Kennedy, S. M. Prokes, 0. J. Glembocki, K. L. Wang, and C H. Chern, Phys. Rev. Lett. 65, 1247 (1990).
    • “A Gold and V. T. Dolgopolov, Phys. Rev. B 33, 1076 (1986).
    • “C: J. Emeleus, T. E. Whall, D. W. Smith, N. L. Mattey, R. A. Kubiak, E. H. C. Parker, and M. J Kearney, Phys. Rev. B 47,10 016 (1993).
    • r9S. K. Chun, and K. I,. Wang, IEEE Trans. Electron Devices ED-39, 2153 (1992).
    • Appl. Phys. Let, Vol. 64, No. 3, 17 January 1994
  • No related research data.
  • No similar publications.

Share - Bookmark

Cite this article