Remember Me
Or use your Academic/Social account:


Or use your Academic/Social account:


You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.


Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message


Verify Password:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:
fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Maricar, M. Ismaeel; Khalid, Ata; Glover, J.; Evans, G.A.; Vasileious, P.; Li, Chong; Cumming, D.; Oxley, C.H. (2014)
Publisher: Elsevier
Languages: English
Types: Article
Subjects: harmonics, millimetric wave source, InP, GaAs, Planar Gunn diode
Planar Indium Gallium Arsenide (InGaAs) Gunn diodes with on chip matching circuits have been fabricated on a semi-insulating Indium Phosphide (InP) substrate to enable the extraction of the second harmonic in millimeter-wave and terahertz frequencies. The planar Gunn diodes were designed in coplanar waveguide (CPW) format with an active channel length of 4 μm and width 120 μm integrated to CPW matching circuit and radial stub resonator to suppress the fundamental and to extract the second harmonic. The initial experimental measurements have given a second harmonic signal at 118 GHz with an output power of -20 dBm and the fundamental signal at 59 GHz was suppressed to the noise level of the experimental set-up.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • A. Khalid, G. M. Dunn, N. Pilgrim, C. R. Stanley, I. G. Thayne, M. Holland, and D. R. S. Cumming, “Planar Gunn-type triode oscillator at 83 GHz,” Electron. Lett., vol. 43, no. 15, p. 837, 2007.
    • A. Khalid, N. J. Pilgrim, G. M. Dunn, M. C. Holland, C. R. Stanley, I. G. Thayne, and D. R. S. Cumming, “A Planar Gunn Diode Operating Above 100 GHz,” IEEE Electron Device Lett., vol. 28, no. 10, pp. 849-851, Oct. 2007.
    • A. Khalid, C. Li, V. Papageogiou, G. M. Dunn, M. J. Steer, I. G. Thayne, M. Kuball, C. H. Oxley, M. Montes Bajo, A. Stephen, J. Glover, and D. R. S. Cumming, “In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz,” Electron Device Lett. IEEE, vol. 34, no. 1, pp. 39-41, Jan. 2013.
    • W. Kowalsky, A. Schlachetzki, and H.-H. Wehmann, “Transferred-electron domains in In0.53Ga0.47As in dependence on the the nl product,” Solid. State. Electron., vol. 27, no. 2, pp. 187- 189, Feb. 1984.
  • No related research data.
  • No similar publications.

Share - Bookmark

Funded by projects

  • RCUK | Novel Thermal Management o...

Cite this article