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Maricar, M. Ismaeel; Khalid, Ata; Glover, J.; Evans, G.A.; Vasileious, P.; Li, Chong; Cumming, D.; Oxley, C.H. (2014)
Publisher: Elsevier
Languages: English
Types: Article
Subjects: harmonics, millimetric wave source, InP, GaAs, Planar Gunn diode
Planar Indium Gallium Arsenide (InGaAs) Gunn diodes with on chip matching circuits have been fabricated on a semi-insulating Indium Phosphide (InP) substrate to enable the extraction of the second harmonic in millimeter-wave and terahertz frequencies. The planar Gunn diodes were designed in coplanar waveguide (CPW) format with an active channel length of 4 μm and width 120 μm integrated to CPW matching circuit and radial stub resonator to suppress the fundamental and to extract the second harmonic. The initial experimental measurements have given a second harmonic signal at 118 GHz with an output power of -20 dBm and the fundamental signal at 59 GHz was suppressed to the noise level of the experimental set-up.
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    • A. Khalid, G. M. Dunn, N. Pilgrim, C. R. Stanley, I. G. Thayne, M. Holland, and D. R. S. Cumming, “Planar Gunn-type triode oscillator at 83 GHz,” Electron. Lett., vol. 43, no. 15, p. 837, 2007.
    • A. Khalid, N. J. Pilgrim, G. M. Dunn, M. C. Holland, C. R. Stanley, I. G. Thayne, and D. R. S. Cumming, “A Planar Gunn Diode Operating Above 100 GHz,” IEEE Electron Device Lett., vol. 28, no. 10, pp. 849-851, Oct. 2007.
    • A. Khalid, C. Li, V. Papageogiou, G. M. Dunn, M. J. Steer, I. G. Thayne, M. Kuball, C. H. Oxley, M. Montes Bajo, A. Stephen, J. Glover, and D. R. S. Cumming, “In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz,” Electron Device Lett. IEEE, vol. 34, no. 1, pp. 39-41, Jan. 2013.
    • W. Kowalsky, A. Schlachetzki, and H.-H. Wehmann, “Transferred-electron domains in In0.53Ga0.47As in dependence on the the nl product,” Solid. State. Electron., vol. 27, no. 2, pp. 187- 189, Feb. 1984.
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