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Lu, J.; Haworth, L.; Westwood, David; Macdonald, John Emyr (2001)
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC
Identifiers:doi:10.1063/1.1350430
We studied the atomic H etching of 6H-SiC substrates and the initial stages of GaN/6H-SiC molecular-beam epitaxy growth. Atomic H etched 6H-SiC(0001)Si and (000math)C surfaces show a (√×√)−R30° and a (1×1) reconstruction respectively, with 0.7±0.2 monolayers of remnant O on both surfaces. GaN/6H-SiC(0001)Si growth is initiated by the formation of islands that develop into flat-top terraces through coalescence. Growth steps of one or integer numbers of the GaN atomic bilayer height are observed. GaN grown on 6H-SiC(000math)C is rougher with islands of irregular shape. X-ray photoemission spectroscopy studies show that Si 2p and C 1s photoelectron inelastic mean free paths in GaN are 22±1 and 20±1 Å, respectively.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • coalescence. At 110 Å @Fig. 2~d!#, the surface grew flatter with larger coalesced islands. After 1100 Å GaN had been grown ~Fig. 3!, large hexagonal terraces with growth steps of ;2.5 Å or multiples of 2.5 Å in height were observed consistent with the height of one or an integer number of GaN bilayers. In contrast, GaN grown on ( 000¯1 ) C is rougher and consists of islands with irregular shape. The growth steps were not observed.
    • The polarities of the two samples were determined by chemical etching using a 20% KOH aqueous solution for 5 min at room temperature.12 The etching resulted in little change on the morphology of the film grown on ( 0001) Si , whereas considerable morphology change was observed for the film grown on ( 000¯1 ) C . According to Ref. 12, the film grown on ( 0001) Si and ( 000¯1 ) C are assigned to Ga and N polarity, respectively.
    • In conclusion, 6H-SiC prepared by in situ atomic H etching at 650 °C exhibits a weak ( ) 3 ) ) 2 R 30° and a ( 1 3 1 ) RHEED pattern for ( 0001) Si and ( 000¯1 ) C face, respectively, with a remnant O coverage of ; 0.76 0.2 monolayers for both faces. XPS studies show that the inelastic mean free path for Si 2 p and C 1 s photoemissions in GaN are 226 1 and 206 1 Å , respectively. The GaN/6HSiC~0001!Si MBE growth is initiated by the formation of islands following 0.6 Å of two-dimensional growth. Further growth results in coalescence of the islands at ;25 Å. The flat-top shaped islands and flat terraces with growth steps of one or integer number of GaN atomic bilayer height are ob-
    • 1 S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys., Part 2 30, L1998 ~1991!.
    • 2 S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2 35, L217 ~1996!.
    • 3 J. Lu, L. Haworth, P. Hill, D. I. Westwood, and J. E. Macdonald, J. Vac.
    • Sci. Technol. B 17, 1659 ~1999!.
    • 4 M. E. Lin, S. Strite, A. Agarwal, A. Salvador, G. L. Zhou, N. Teraguchi, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 62, 702 ~1993!.
    • 5 U. Stark, J. Schardt, J. Bernhardt, and K. Heinz, J. Vac. Sci. Technol. A 17, 1688 ~1999!.
    • 6 K. H. Ploog, O. Brandt, H. Yang, B. Yang, and A. Trampert, J. Vac. Sci.
    • Technol. B 16, 2229 ~1998!.
    • 7 Z. Sitar, L. L. Smith, and R. F. Davis, J. Cryst. Growth 141, 11 ~1994!.
    • 8 D. Leonard, K. Pond, and P. M. Petroff, Phys. Rev. B 50, 11687 ~1994!.
    • 9 S. A. Chaparro, Y. Zhang, J. Drucker, D. Chandrasekhar, and D. J. Smith, J. Appl. Phys. 87, 2245 ~2000!.
    • 10 F. Midmann, B. Daudin, G. Feuillet, Y. Samson, J. L. Rouvie´re, and N.
    • Pelekanos, J. Appl. Phys. 83, 7618 ~1998!.
    • 11 S. H. Jones, L. K. Seidel, K. M. Lau, and M. Harold, J. Cryst. Growth 108, 73 ~1991!.
    • 12 J. L. Weyher, S. Muller, I. Grzegory, and S. Porowski, J. Cryst. Growth 182, 17 ~1997!.
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