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Zheng, C. X.; Tang, Wen-Xin; Jesson, David E. (2012)
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC

Classified by OpenAIRE into

mesheuropmc: technology, industry, and agriculture
Identifiers:doi:10.1063/1.3684616
Coalescence of droplets during reactive wetting is investigated for the liquid Ga/GaAs(001) system. In situmirror electron microscopy reveals that coalescence predominantly involves the motion of one reactive droplet relative to the other. This behaviour differs significantly from coalescence in non-reactive systems and is associated with contact line pinning at a ridge/etch pit edge which is identified using atomic force microscopy and selective etching. A simple geometrical model is presented to describe the pinning.
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