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Evans-Freeman, J. H.; Vernon-Parry, K. (2005)
Languages: English
Types: Article
Subjects:

A common technique for introducing rare earth atoms into Si and related materials for photonic applications is ion implantation. It is compatible with standard Si processing, and also allows high, non-equilibrium concentrations of rare earths to be introduced. However, the high energies often employed mean that there are collision cascades and potentially severe end-of-range damage. This paper reports on studies of this damage, and the competition it may present to the optical activity of the rare earths. Er-, Si, and Yb-implanted Si samples have been investigated, before and after anneals designed to restore the sample crystallinity. The electrical activity of\ud defects in as-implanted Er, Si, and Yb doped Si has been studied by Deep Level Transient Spectroscopy (DTLS) and the related, high resolution technique, Laplace DLTS (LDLTS), as a function of annealing. Er-implanted Si, regrown by solid phase epitaxy at 600degrees C and then subject to a rapid thermal anneal, has also been studied by time-resolved photoluminescence (PL). The LDLTS studies reveal that there are clear differences in the defect population as a function of depth from the surface, and this is attributed to different defects in the vacancy-rich and interstitial-rich regions. Defects in the interstitial-rich region have electrical characteristics typical of small extended defects, and these may provide the precursors for larger structural defects in annealed layers. The time-resolved PL of the annealed layers, in combination with electron microscopy, shows that the Er emission at 1.54microns contains a fast component attributed to non-radiative recombination at deep states due to small dislocations. It is concluded that there can be measurable competition to the radiative efficiency in rare-earth implanted Si that is due to the implantation and is not specific to Er.

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    • [1] P. G. Kik and A. Polman, in L. Pavesi et al (Eds), Towards the First Silicon Laser, Kluwer Academic Publishers, 2003, p.383
    • [2] C. E. Chryssou, A. J. Kenyon, T. S. Iwayama, C. W. Pitt, and D. E. Hole, Appl. Phys. Lett., 75 (1999) 2011
    • [3] G. Franzo, V. Vinciguerra, and F. Priolo, Appl. Phys. A, 69 (1999) 3
    • [4] V. Touboltsev and P. Jalkanen, J. Appl. Phys., 97 (2005) 013526
    • [5] N.E.B Cowern, B. Colombeau, J. Benson, A. J. Smith, W. Lerch, S. Paul, T. Graf, F. Cristiano, X. Hebras, D. Bolze, Appl. Phys. Lett., 86 (2005) 101905
    • [6] M. Benzohra, F. Olivie, M. Idrissi-Benzohra, K. Ketata, and M. Ketata, Nucl. Instr. Meth. Phys. B, 187 (2002) 201
    • [7] Yu. Shreter, J.H. Evans, B. Hamilton, A. R. Peaker, C. Hill, D. R. Boys, C. D. Meekison and G. R. Booker, Appl. Surf. Sci., 63 (1993) 227
    • [8] N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraiz, Phys. Rev. Lett., 82 (1999) 4460
    • [9] J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, YH Xie, J. M. Poate and L. C. Kimmerling J. Appl. Phys., 70 (1991) 2672
    • [10] S. Coffa, G. Franzò, F. Priolo, A. Polman and R. Serna, Phys. Rev., B 49 (1994) 16313
    • [11] S. Fukatsu, Y. Mera, M. Inoue, K. Maeda, H. Akiyama, and H. Sakaki, Appl. Phys. Lett., 68, (1996) 1889
    • [12] L. Dobaczewski, P. Kaczor, I.D. Hawkins and A.R. Peaker, J. Appl. Phys., 76 (1994) 194
    • [13] F. Priolo, G. Franzò, S. Coffa, and A. Carnera, Phys. Rev. B, 57 (1998) 4443
    • [14] N. A. Sobolev, O. B. Gusev, E. I. Shek, V. I. Vdovin, T. G. Yugova, and A. M. Emel'yanov, Appl. Phys. Lett., 72 (1998) 3326
    • [15] K. H. Yang. J. Electrochem. Soc. 131 (1984) 1140
    • [16] P. Pellegrino, P. Leveque, J. Wong-Leung, C. Jagadish and B. G. Svensson, Appl. Phys. Lett. 78, 3442 (2001)
    • [17] G.D. Watkins and J.W. Corbett, Phys. Rev. 138, (1965) A543
    • [18] M.T Asom, J.L. Benton, R. Sauer, and L.C. Kimerling, Appl. Phys. Lett. 51, (1987) 256
    • [20] D.V. Lang, J. Appl. Phys., 45, (1974) 3023
    • [21] N. Abdelgader and J. H. Evans-Freeman, J. Appl. Phys., 93 (2003) 5118
    • [22] P. R. Wilshaw and G. R. Booker, in Proceedings of the Royal Microscopical Society Conference, Eds. A. G. Cullis and D. B. Holt, Inst. Phys Conf Ser. 76 (1985) 329
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