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Herrnsdorf, Johannes; Mckendry, Jonathan J.D.; Zhang, Shuailong; Xie, Enyuan; Ferreira, Ricardo; Massoubre, David; Zuhdi, Ahmad Mahmood; Henderson, Robert K.; Underwood, Ian; Watson, Scott; Kelly, Anthony E.; Gu, Erdan; Dawson, Martin D. (2015)
Publisher: IEEE
Languages: English
Types: Article
Subjects:
Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².
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    • [1] J. J. D. McKendry et al., “Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses,” IEEE Photon. Technol. Lett., vol. 21, no. 12, pp. 811-813, Jun. 15, 2009.
    • [2] Z. J. Liu, K. M. Wong, C. W. Keung, C. W. Tang, and K. M. Lau, “Monolithic LED microdisplay on active matrix substrate using flip-chip technology,” IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 4, pp. 1298-1302, Jul./Aug. 2009.
    • [3] J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, “III-nitride full-scale high-resolution microdisplays,” Appl. Phys. Lett., vol. 99, no. 3, p. 031116, 2011.
    • [4] N. Grossman et al., “Multi-site optical excitation using ChR2 and micro-LED array,” J. Neural Eng., vol. 7, no. 1, p. 016004, 2010.
    • [5] A. Zarowna-Dabrowska et al., “Miniaturized optoelectronic tweezers controlled by GaN micro-pixel light emitting diode arrays,” Opt. Exp., vol. 19, no. 3, pp. 2720-2728, 2011.
    • [6] A. H. Jeorett et al., “Optoelectronic tweezers system for single cell manipulation and fluorescence imaging of live immune cells,” Opt. Exp., vol. 22, no. 2, pp. 1372-1380, 2014.
    • [7] Z. Gong et al., “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys., vol. 107, no. 1, p. 013103, 2010.
    • [8] Z. J. Liu, W. C. Chong, K. M. Wong, K. H. Tam, and K. M. Lau, “A novel BLU-free full-color LED projector using LED on silicon micro-displays,” IEEE Photon. Technol. Lett., vol. 25, no. 23, pp. 2267-2270, Dec. 1, 2013.
    • [9] J. Herrnsdorf et al., “Micro-LED pumped polymer laser: A discussion of future pump sources for organic lasers,” Laser Photon. Rev., vol. 7, no. 6, pp. 1065-1078, 2013.
    • [10] J. J. D. McKendry et al., “Visible-light communications using a CMOS-controlled micro-light-emitting-diode array,” J. Lightw. Technol., vol. 30, no. 1, pp. 61-67, Jan. 1, 2012.
    • [11] D. Tsonev et al., “A 3-Gb/s single-LED OFDM-based wireless VLC link using a gallium nitride μLED,” IEEE Photon. Technol. Lett., vol. 26, no. 7, pp. 637-640, Apr. 1, 2014.
    • [12] S. Zhang et al., “1.5 Gbit/s multi-channel visible light communications using CMOS-controlled GaN-based LEDs,” J. Lightw. Technol., vol. 31, no. 8, pp. 1211-1216, Apr. 15, 2013.
    • [13] Z. Gong et al., “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2650-2658, Oct. 2007.
    • [14] Z. J. Liu, W. C. Chong, K. M. Wong, C. W. Keung, and K. M. Lau, “Investigation of forward voltage uniformity in monolithic light-emitting diode arrays,” IEEE Photon. Technol. Lett., vol. 25, no. 13, pp. 1290-1293, Jul. 1, 2013.
    • [15] J.-L. Lee et al., “Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy,” Appl. Phys. Lett., vol. 74, no. 16, pp. 2289-2291, 1999.
    • [16] B. R. Rae, “Micro-systems for time-resolved fluorescence analysis using CMOS single-photon avalanche diodes and micro-LEDs,” Ph.D. dissertation, School Eng., Univ. Edinburgh, Edinburgh, U.K., 2009.
    • [17] B. R. Rae et al., “A CMOS time-resolved fluorescence lifetime analysis micro-system,” Sensors, vol. 9, no. 11, pp. 9255-9274, 2009.
    • [18] S. Zhang et al., “CMOS-controlled color-tunable smart display,” IEEE Photon. J., vol. 4, no. 5, pp. 1639-1646, Oct. 2012.
    • [19] W. Yang et al., “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys., vol. 116, no. 4, p. 044512, 2014.
    • [20] X. Guo, Y.-L. Li, and E. F. Schubert, “Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry,” Appl. Phys. Lett., vol. 79, no. 13, pp. 1936-1938, 2001.
    • [21] S. Chhajed, Y. Xi, Y.-L. Li, T. Gessmann, and E. F. Schubert, “Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes,” J. Appl. Phys., vol. 97, no. 5, p. 054506, 2005. [Online]. Available: http://scitation.aip.org/content/aip/journal/jap/97/5/10.1063/1.1852073
    • [22] J. Herrnsdorf, E. Xie, I. M. Watson, N. Laurand, and M. D. Dawson, “Planar micro- and nano-patterning of GaN light-emitting diodes: Guidelines and limitations,” J. Appl. Phys., vol. 115, no. 8, p. 084503, 2014.
    • [23] M. V. Bogdanov, K. A. Bulashevich, I. Y. Evstratov, A. I. Zhmakin, and S. Y. Karpov, “Coupled modeling of current spreading, thermal effects and light extraction in III-nitride light-emitting diodes,” Semicond. Sci. Technol., vol. 23, no. 12, p. 125023, 2008.
    • [24] X. Guo and E. F. Schubert, “Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates,” Appl. Phys. Lett., vol. 78, no. 21, pp. 3337-3339, 2001.
    • [25] A. E. Chernyakov, K. A. Bulashevich, S. Y. Karpov, and A. L. Zakgeim, “Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs,” Phys. Status Solidi A, vol. 210, no. 3, pp. 466-469, 2013.
    • [26] H. Okumura, “Present status and future prospect of widegap semiconductor high-power devices,” Jpn. J. Appl. Phys., vol. 45, no. 10A, pp. 7565-7586, 2006.
    • Johannes Herrnsdorf received the Ph.D. degree in physics from the University of Strathclyde, Glasgow, U.K., in 2012. He is involved in GaN micro-LEDs.
    • Jonathan J. D. McKendry (M'13) received the Ph.D. degree in physics from the University of Strathclyde, Glasgow, U.K., in 2011. He is involved in GaN micro-LEDs.
    • Shuailong Zhang received the Ph.D. degree in physics from the University of Strathclyde, Glasgow, U.K., in 2015. He is currently with the University of Glasgow, Glasgow.
    • Enyuan Xie received the Ph.D. degree in physics from the University of Strathclyde, Glasgow, U.K., in 2013. He is involved in fabrication of GaN LEDs.
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