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Herrnsdorf, Johannes; Mckendry, Jonathan J.D.; Zhang, Shuailong; Xie, Enyuan; Ferreira, Ricardo; Massoubre, David; Zuhdi, Ahmad Mahmood; Henderson, Robert K.; Underwood, Ian; Watson, Scott; Kelly, Anthony E.; Gu, Erdan; Dawson, Martin D. (2015)
Publisher: IEEE
Languages: English
Types: Article
Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².
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    • Johannes Herrnsdorf received the Ph.D. degree in physics from the University of Strathclyde, Glasgow, U.K., in 2012. He is involved in GaN micro-LEDs.
    • Jonathan J. D. McKendry (M'13) received the Ph.D. degree in physics from the University of Strathclyde, Glasgow, U.K., in 2011. He is involved in GaN micro-LEDs.
    • Shuailong Zhang received the Ph.D. degree in physics from the University of Strathclyde, Glasgow, U.K., in 2015. He is currently with the University of Glasgow, Glasgow.
    • Enyuan Xie received the Ph.D. degree in physics from the University of Strathclyde, Glasgow, U.K., in 2013. He is involved in fabrication of GaN LEDs.
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