Remember Me
Or use your Academic/Social account:


Or use your Academic/Social account:


You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.


Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message


Verify Password:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:
fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Li, Ke; Evans, Paul; Johnson, Christopher Mark (2016)
Languages: English
Types: Unknown
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. After that, Esw of a 650V GaN-HEMT is measured in hard switching condition and is compared with that of a 1200V SiC-MOSFET and a 650V SiC-MOSFET with the same current rating, in which it is shown that Esw of a GaN-HEMT is smaller than a 1200V SiC-MOSFET, which is smaller than 650V SiC-MOSFET. Following by that, in order to reduce device turn-ON switching energy, a zero voltage switching circuit is used to evaluate all the devices. Device output capacitance stored energy Eoss are measured and turn-OFF switching losses are obtained by subtracting Eoss, which shows that GaN-HEMT is sill better than SiC device in terms of switching losses and 1200V SiC-MOSFET has smaller switching losses than 650V SiC-MOSFET.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • [1] J. Rabkowski, D. Peftitsis, and H.-P. Nee, “Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter,” Power Electronics, IEEE Transactions on, vol. 29, no. 5, pp. 2482-2491, 2014.
    • [2] J. Rabkowski, D. Peftitsis, and H.-P. Nee, “Design steps towards a 40- kVA SiC inverter with an efficiency exceeding 99.5%,” in Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE, pp. 1536-1543, Feb 2012.
    • [3] J. Brandelero, B. Cougo, T. Meynard, and N. Videau, “A non-intrusive method for measuring switching losses of GaN power transistors,” in Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE, pp. 246-251, Nov 2013.
    • [4] B. Whitaker, A. Barkley, Z. Cole, and B. Passmore et al., “A HighDensity, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices,” Power Electronics, IEEE Transactions on, vol. 29, no. 5, pp. 2606-2617, 2014.
    • [5] S. Ji, D. Reusch, and F. Lee, “High-Frequency High Power Density 3-D Integrated Gallium-Nitride-Based Point of Load Module Design,” Power Electronics, IEEE Transactions on, vol. 28, no. 9, pp. 4216-4226, 2013.
    • [6] X. Huang, Z. Liu, F. C. Lee, and Q. Li, “Characterization and Enhancement of High-Voltage Cascode GaN Devices,” IEEE Transactions on Electron Devices, vol. 62, pp. 270-277, Feb 2015.
    • [7] M. Kasper, R. M. Burkart, G. Deboy, and J. W. Kolar, “Zvs of power mosfets revisited,” IEEE Transactions on Power Electronics, vol. 31, pp. 8063-8067, Dec 2016.
    • [8] J. Lutz, H. Schlangenotto, U. Scheuermann, and R. De Doncker, Semiconductor Power Devices. Springer, 2011.
    • [9] B. Baliga, Advanced High Voltage Power Device Concepts. Springer, 2011.
    • [10] D. Ueda, H. Takagi, and G. Kano, “A new vertical power MOSFET structure with extremely reduced on-resistance,” IEEE Transactions on Electron Devices, vol. 32, pp. 2-6, Jan 1985.
    • [11] M. Ruff, H. Mitlehner, and R. Helbig, “SiC devices: physics and numerical simulation,” IEEE Transactions on Electron Devices, vol. 41, pp. 1040-1054, Jun 1994.
    • [12] H. Wu, M. Chen, L. Gao, and M. Li, “Thermal resistance analysis by numerical method for power device packaging,” in Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on, pp. 666-670, Aug 2012.
  • No related research data.
  • Discovered through pilot similarity algorithms. Send us your feedback.

Share - Bookmark

Download from

Cite this article