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fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Li, Ke; Evans, Paul; Johnson, Christopher Mark (2016)
Languages: English
Types: Unknown
Subjects:
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. After that, Esw of a 650V GaN-HEMT is measured in hard switching condition and is compared with that of a 1200V SiC-MOSFET and a 650V SiC-MOSFET with the same current rating, in which it is shown that Esw of a GaN-HEMT is smaller than a 1200V SiC-MOSFET, which is smaller than 650V SiC-MOSFET. Following by that, in order to reduce device turn-ON switching energy, a zero voltage switching circuit is used to evaluate all the devices. Device output capacitance stored energy Eoss are measured and turn-OFF switching losses are obtained by subtracting Eoss, which shows that GaN-HEMT is sill better than SiC device in terms of switching losses and 1200V SiC-MOSFET has smaller switching losses than 650V SiC-MOSFET.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • [1] J. Rabkowski, D. Peftitsis, and H.-P. Nee, “Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter,” Power Electronics, IEEE Transactions on, vol. 29, no. 5, pp. 2482-2491, 2014.
    • [2] J. Rabkowski, D. Peftitsis, and H.-P. Nee, “Design steps towards a 40- kVA SiC inverter with an efficiency exceeding 99.5%,” in Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE, pp. 1536-1543, Feb 2012.
    • [3] J. Brandelero, B. Cougo, T. Meynard, and N. Videau, “A non-intrusive method for measuring switching losses of GaN power transistors,” in Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE, pp. 246-251, Nov 2013.
    • [4] B. Whitaker, A. Barkley, Z. Cole, and B. Passmore et al., “A HighDensity, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices,” Power Electronics, IEEE Transactions on, vol. 29, no. 5, pp. 2606-2617, 2014.
    • [5] S. Ji, D. Reusch, and F. Lee, “High-Frequency High Power Density 3-D Integrated Gallium-Nitride-Based Point of Load Module Design,” Power Electronics, IEEE Transactions on, vol. 28, no. 9, pp. 4216-4226, 2013.
    • [6] X. Huang, Z. Liu, F. C. Lee, and Q. Li, “Characterization and Enhancement of High-Voltage Cascode GaN Devices,” IEEE Transactions on Electron Devices, vol. 62, pp. 270-277, Feb 2015.
    • [7] M. Kasper, R. M. Burkart, G. Deboy, and J. W. Kolar, “Zvs of power mosfets revisited,” IEEE Transactions on Power Electronics, vol. 31, pp. 8063-8067, Dec 2016.
    • [8] J. Lutz, H. Schlangenotto, U. Scheuermann, and R. De Doncker, Semiconductor Power Devices. Springer, 2011.
    • [9] B. Baliga, Advanced High Voltage Power Device Concepts. Springer, 2011.
    • [10] D. Ueda, H. Takagi, and G. Kano, “A new vertical power MOSFET structure with extremely reduced on-resistance,” IEEE Transactions on Electron Devices, vol. 32, pp. 2-6, Jan 1985.
    • [11] M. Ruff, H. Mitlehner, and R. Helbig, “SiC devices: physics and numerical simulation,” IEEE Transactions on Electron Devices, vol. 41, pp. 1040-1054, Jun 1994.
    • [12] H. Wu, M. Chen, L. Gao, and M. Li, “Thermal resistance analysis by numerical method for power device packaging,” in Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on, pp. 666-670, Aug 2012.
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  • Discovered through pilot similarity algorithms. Send us your feedback.

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