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Rajpalke, Mohana K.; Linhart, W. M.; Yu, K. M.; Jones, T. S. (Tim S.); Ashwin, M. J.; Veal, T. D. (Tim D.) (2015)
Publisher: Elsevier BV
Journal: Journal of Crystal Growth
Languages: English
Types: Article
Subjects: Inorganic Chemistry, QC, QD, Condensed Matter Physics, Materials Chemistry
The incorporation of Bi in GaSb1−xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate View the MathML source. The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0
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