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fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC, TK

Classified by OpenAIRE into

mesheuropmc: technology, industry, and agriculture, equipment and supplies
arxiv: Condensed Matter::Materials Science
Identifiers:doi:10.1063/1.1611270
Electron transport properties in InNxSb1–x are investigated for a range of alloy compositions. The band structure of InNxSb1–x is modeled using a modified k·p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the dispersion relation of the E– subband. These calculations reveal that for alloy compositions in the range 0.001<=x<=0.02 there is only a small variation of the carrier concentration at a given plasma frequency. A similar trend is observed for the effective mass at the Fermi level. Measurements of the plasma frequency and plasmon lifetime for InNxSb1–x alloys enable the carrier concentration and the effective mass at the Fermi level to be determined and a lower limit for the electron mobility to be estimated.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

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