LOGIN TO YOUR ACCOUNT

Username
Password
Remember Me
Or use your Academic/Social account:

CREATE AN ACCOUNT

Or use your Academic/Social account:

Congratulations!

You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.

Important!

Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message

CREATE AN ACCOUNT

Name:
Username:
Password:
Verify Password:
E-mail:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:
fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC

Classified by OpenAIRE into

arxiv: Condensed Matter::Materials Science, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter::Other
Identifiers:doi:10.1063/1.350638
A series of investigations are presented which address various aspects of the growth, by molecular beam epitaxy, of n‐type (Si doped) on‐axis GaAs/GaAs(111)B. In situ characterization by reflection high‐energy electron diffraction has identified four surface phases on the static (zero growth rate) surface, and three reconstructions which occur, depending upon the substrate temperature, during growth. The n‐type doping properties of GaAs/GaAs(111)B epilayers have been compared with n‐GaAs/GaAs(100) structures. Hall effect and low‐temperature photoluminescence measurements have demonstrated that it is possible to dope GaAs/GaAs(111)B with Si in the 6×1014 to 1018 cm−3 range. A variable growth temperature study is also presented which examines the surface structural, electrical, optical, and surface morphological properties of n‐GaAs/GaAs(111)B grown in the 400 to 650 °C temperature range. The onset of electrical conduction, and optically active material, was found to be directly related to changes in the dynamic surface structure. The variable growth temperature study also revealed a temperature regime within which it was possible to significantly improve the surface morphology of on‐axis GaAs/GaAs(111)B structures whilst retaining good electrical and optical properties.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • 'A. Y. Cho, J. Appl. Phys. 41,278O (1970).
    • *D. L. Smith, Solid State Commun. 57, 919 (1986).
    • 3E. A. Caridi, T. Y. Chang, K. W. Goossen, and L. P. Eastman, Appl. Phys. Lett. 56, 660 (1990).
    • 4E. Kapon, J. P. Harbison, C. P. Yuin, and N. G. Stoffel, Appl. Phys. L&t. 52, 607 (1988).
    • '5. M. Ballingall and C. E. C. Wood, Appl. Phys. Lett. 41, 947 (1982).
    • “W. I. Wang, E. E. Mendez, T. S. Kuan, and L. Esaki, Appl. Phys. L&t. 47, 826 (1985).
    • 'L. Vina and W. I. Wang, Appl. Phys. L&t. 48, 36 (1986).
    • 'Y. Kadoya, A. Sato, H. Kano, and H. Sakaki, J. Cryst. Growth 111, 280 (1991).
    • 'M. Shigeta, Y. Okano, H. Seta, H. Katahama, S. Nishine, K. Kobayashi, and I. Fujimoto, J. Cryst. Growth 111, 284 (1991j.
    • 'OP. Chen, K. C. Rajkumar, and A. Madhukar, Appl. Phys. Lett. 58, 1771 (1991).
    • 'lY. Takano, M. Lopez, T. Torihata, T. Ikei, Y. Kanaya, K. Pak, and H. Yonezu, J. Cryst. Growth 111, 216 (1991).
    • “K. Elcess, J.-L. L&in, and C. G. Fonstad, J. Vat. Sci. Technol. B 6, 638 (1988).
    • 13S.M. Shank and G. W. Wicks, J. Cryst. Growth 111, 440 (1991).
    • 14D. I. Westwood, D. A. Woolf, and R. H. Williams, J. Cryst. Growth 98, 782 (1989).
    • “J. H. Neave and B. A. Joyce, J. Cryst. Growth 44, 387 (1978).
    • I6A. Y. Cho, M. B. Panish, and I. Hayashi, Proceedings 3rd International Symposium on GaAs and Related Compounds, edited by K. Paulus (Institute of Physics, London, 1970), p. 18.
    • 17P Chen, K. C. Rajkumar and A. Madhukar, J. Vat. Sci. Technol. B 9, 2k2 (1991).
    • '*A. Chandra, C. E. C. Wood, D. W. Woodard, and L. F. Eastman, Solid State Electron. 22, 645 (1979).
    • l9 K. Ploog, MBE of Artif icially Layered Semiconductor Structures: Basic Concepts and Recent Achievements, NATO AS1 Series B, edited by P. Dhez and C. Weisbuch (Plenum, New York, 1988), Vol. 182.
    • “M. Ilegems, “Properties of III-V Layers,” The Technology and Physics af MolecuIar Beam Epitaxy, edited by E. H. C. Parker (Plenum, New York, 1985).
    • “H. K__ii_n_z_el and K. Ploog, Appl. Phys. Lett. 37, 416 (1980).
    • “A. Chin I, P. Martin, P. Ho, J. Ballingall, T.-h. Yu, and J. Mazurowski, Appl. Phys. Lett. 59, 1899 (1991).
    • 23D. A . Woolf, D. I. Westwood, M. A. Anderson, and R. H. Williams, Appl. Surf. Sci. 50, 445 (1991).
    • 24J.H. Neave and B. A. Joyce, J. Cryst. Growth 43, 204 (1978).
    • “S. M. Newstead, R. A. A. Kubiak, and E. H. C. Parker, J. Cryst. Growth 81, 49 (1987).
    • 26J. N. Miller and T. S. Low, J. Cryst. Growth 111, 30 (1991).
    • 4915 J. Appt. Phys., Vol. 71, No. 10, 15 May 1992
  • No related research data.
  • No similar publications.

Share - Bookmark

Cite this article