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Emeleus, C. J.; Sadeghzadeh, Mohammad Ali; Phillips, P. J. (Peter J.); Parker, Evan H. C.; Whall, Terry E.; Pepper, M.; Evans, A. G. R. (1997)
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC, TK

Classified by OpenAIRE into

arxiv: Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
A device comprising a low-resistivity, n-type, Si substrate as a back gate to a p-type (boron), remote-doped, SiGe quantum well has been fabricated and characterized. Reverse and forward voltage biasing of the gate with respect to the two-dimensional hole gas in the quantum well allows the density of holes to be varied from 8 × 1011 cm–2 down to a measurement-limited value of 4 × 1011 cm–2. This device is used to demonstrate the evolution with decreasing carrier density of a re-entrant insulator state between the integer quantum Hall effect states with filling factors 1 and 3.
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    • 1872 Appl. Phys. Lett., Vol. 70, No. 14, 7 April 1997 Emeleus et al.
    • Downloaded¬14¬Jul¬2009¬to¬¬Redistribution¬subject¬to¬AIP¬license¬or¬copyright;¬see¬http://apl.aip.org/apl/copyright.jsp
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