Remember Me
Or use your Academic/Social account:


You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.


Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message


Verify Password:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:

OpenAIRE is about to release its new face with lots of new content and services.
During September, you may notice downtime in services, while some functionalities (e.g. user registration, login, validation, claiming) will be temporarily disabled.
We apologize for the inconvenience, please stay tuned!
For further information please contact helpdesk[at]openaire.eu

fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Rafailov, Edik U. (2014)
Publisher: SPIE
Languages: English
Types: Part of book or chapter of book
Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • [1] Crawford, M. H., “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15, 1028-1040 (2009).
    • [2] Narukawa, Y., Ichikawa, M., Sanga, D., Sano, M., and Mukai, T., “White light emitting diodes with super high luminous efficacy,” J. Phys. D: Appl. Phys. 43, 354002 (2010).
    • [3] Schubert, E. F., and Kim, J. K., Science, “Solid-state light source getting smart,” Science 308 (5726), 1274- 1278 (2005).
    • [4] Schubert, E. F., [Light-Emitting Diodes], Cambridge University Press, Cambridge, England, (2003).
    • [5] Kim, T., “A nanopyramid structure for monolithic white-light LEDs,” SPIE Newsroom, Jan. 30 (2013).
    • [6] Ko, Y.-H., Kim, J.-H., Jin, L.-H., Ko, S.-M., Kwon, B.-J., Kim, J., Kim, T., Cho, Y.-H., “Electrically driven quantum dot/wire/well hybrid light-emitting diodes,” Adv. Mater. 23(45), 5364-5369 (2011).
    • [7] Damilano, B., Trad, N., Brault, J., Demolon, P., Natali, F. and Massies, J., “Colour control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter,” Phys. Status Solidi A 209(3), 465-468(2012).
    • [8] Oh, J. H., Oh J. R., Park, H. K., Sung, Y.-G., and Do, Y. R., “Highly-efficient, tunable green, phosphorconverted LEDs using a long-pass dichroic filter and a series of orthosilicate phosphors for tri-color white LEDs,” Optics Express 20(S1), A1-A12 (2012).
    • [9] Yu, C., Lirong, H., and Shanshan, Z., “Monolithic white LED based on AlxGa1-xN/InyGa1-yN DBR resonantcavity,” Journal of Semiconductors 30, 014005 (2009).
    • [10] Yamada, M., Narukawa, Y., and Mukai, T., “Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well,” Jpn. J. Appl. Phys. 41, L246-L248 (2002).
    • [11] Damilano, B., Grandjean, N., Pernot, C. and Massies, J., “Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells,” Jpn. J. Appl. Phys. 40, L918-L920 (2001).
    • [12] Lu, C. F., Huang, C. F., Chen, Y. S., Shiao, W. Y., Chen, C. Y., Lu, Y. C., and Yang, C. C., “Phosphor-Free Monolithic White-Light LED,” IEEE Journal of Selected Topics in Quantum Electronics 15, 1210-1217 (2009).
    • [13] Dalmasso, S., Damilano, B., Pernot, C., Dussaigne, A., Byrne, D., Grand- jean, N., Leroux, M., and Massies, J., “Injection Dependence of the Electroluminescence Spectra of Phosphor Free GaN-Based White Light Emitting Diodes,” Phys. Status Solidi A 192, 139-143 (2002).
    • [14] Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Kryzhanovskaya, N. V., Synitsin, M. A., Sizov, V. S., Zakgeim, A. L., and Mizerov, M. N., “A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices,” Semiconductors 44(6), 808-811 (2010).
    • [15] Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Kryzhanovskaya, N. V., Sizov, V. S., Synitsin, M. A., Yakovlev, E. V., Chernyakov, A. E., Zakgeim, A. L., Cherkashin, N. A. and Hytch, M., “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi C 8, 2308-2310 (2011).
    • [16] Ustinov, V. M., Tsatsulnikov, A. F., Lundin, V. V., Sakharov, A. V., Nikolaev, A. E., Zavarin, E. E., Zakgeim, A. L., Chernyakov, A. E., Mizerov, M. N., Cherkashin, N. A., and Hytch, M., “Monolithic White LEDs: Approaches, Technology, Design,” Journal of Surface Investigation. Xray, Synchrotron and Neutron Techniques 6, 501-504 (2012)
    • [17] Lundin, W.V., Nikolaev, A.E., Sakharov, A.V., Zavarin, E.E., Valkovskiy, G.A., Yagovkina, M.A., Usov, S.O., Kryzhanovskaya, N.V., Sizov, V.S., Brunkov, P.N., Zakgeim, A.L., Cherniakov, A.E., Cherkashin, N.A., Hytch, M.J., Yakovlev, E.V., Bazarevskiy, D.S., Rozhavskaya, M.M., and Tsatsulnikov, A.F., “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” Journal of Crystal Growth 315, 267 (2011).
    • [18] Chernyakov, A. E., Bulashevich, K. A., Karpov, S. Yu., and Zakgeim, A. L., “Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs,” Phys. Status Solidi A 210, 466-469 (2013).
    • [19] Rue, H. Y., Kim, H. S., and Shim, J. I., “Rate equation analysis of efficiency droop in InGaN light-emitting diodes,” Appl. Phys. Lett. 95, 081114 (2009).
    • [20] Zhu, D., Xu, J., Noemaun, A. N., Kim, J. K., Schubert, E. F., et al., “The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 94, 081113 (2009).
  • No related research data.
  • No similar publications.

Share - Bookmark

Funded by projects


Cite this article

Cookies make it easier for us to provide you with our services. With the usage of our services you permit us to use cookies.
More information Ok