Remember Me
Or use your Academic/Social account:


You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.


Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message


Verify Password:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:

OpenAIRE is about to release its new face with lots of new content and services.
During September, you may notice downtime in services, while some functionalities (e.g. user registration, login, validation, claiming) will be temporarily disabled.
We apologize for the inconvenience, please stay tuned!
For further information please contact helpdesk[at]openaire.eu

fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Maricar, Mohamed Ismaeel; Khalid, Ata; Cumming, D. R. S.; Oxley, C. H. (2016)
Publisher: Elsevier Ltd.
Journal: Solid-State Electronics
Languages: English
Types: Article
Subjects: second harmonic, diamond resonator, Condensed Matter Physics, InGaAs, Electrical and Electronic Engineering, Materials Chemistry, power, Electronic, Optical and Magnetic Materials, planar Gunn diode, millimeter wave source
Planar Indium Gallium Arsenide (In0.57Ga0.47As) Gunn diode was fabricated on a semi-insulating indium phosphide substrate with on chip matching circuit to enable the extraction of second harmonic in millimeter and terahertz frequencies. The In0.57Ga0.47As planar Gunn diodes were designed with an active length of 4 μm, channel width of 120 μm and integrated with a novel diamond resonator to suppress the fundamental and extract the second harmonic. The experimental results gave good fundamental suppression and extraction of second harmonic (121.68 GHz) with an RF output power of −14.1 dBm. This is highest recorded power at the second harmonic from a planar Gunn diode.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • [1] Gunn JB. Microwave oscillations of current in III-V semiconductors. Solid State Commun 1993;88(11-12):883-6.
    • [2] Khalid A, Dunn GM, Pilgrim N, Stanley CR, Thayne IG, Holland M, et al. Planar Gunn-type triode oscillator at 83 GHz. Electron Lett 2007;43(15):837.
    • [3] Khalid A, Pilgrim NJ, Dunn GM, Holland MC, Stanley CR, Thayne IG, et al. A planar gunn diode operating above 100 GHz. IEEE Electron Device Lett 2007;28 (10):849-51.
    • [4] Li C. Design and Characterisation of millimeter-wave planar Gunn diode and integrated circuits. University of Glasgow; 2011.
    • [5] Li C, Khalid A, Paluchowski Caldwell SH, Holland MC, Dunn GM, Thayne IG, et al. Design, fabrication and characterization of InGaAs-channel planar Gunn diodes for millimeter wave applications. Solid State Electron 2011;64 (1):67-72.
    • [6] Khalid A, Li C, Papageogiou V, Dunn GM, Steer MJ, Thayne IG, et al. In0.53Ga0.47As Planar Gunn Diodes operating at a fundamental frequency of 164 GHz. Electron Device Lett IEEE 2013;34(1):39-41.
    • [7] Zhao YY, Wei CJ, Beneking H. Transferred-electron oscillations in In0.53Ga0.47As. Electron Lett 1982;18(19):835.
    • [8] Pérez S, González T, Pardo D, Mateos J. Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes. J Appl Phys 2008;103(9):094516.
    • [9] Maricar MI, Khalid A, Dunn G, Cumming D. Experimentally estimated dead space for GaAs and InP based planar Gunn diodes. Semicond Sci Technol 2014;30. p. 1-5.
    • [10] Maricar MI, Glover J, Evans G, Cumming D, Oxley C. Design and characterization of a novel diamond resonator. Microw Opt Technol Lett 2014;56(7):1691-3.
    • [11] Maricar MI, Glover J, Evans G, Papageorgiou V, Cumming D, Oxley C. Planar Gunn Diode and Resonators. In: 4th Annual seminar on passive RF and microwave components; 2013. p. 2-5.
    • [12] Kowalsky W, Schlachetzki A, Wehmann H-H. Transferred-electron domains in In0.53Ga0.47As in dependence on the the nl product. Solid State Electron 1984;27(2):187-9.
    • [13] Maricar MI, Glover J, Khalid A, Li C, Evans G, Cumming DSR, et al. An AlGaAs/GaAs-based planar Gunn diode oscillator with a fundamental frequency operation of 120 GHz. Microw Opt Technol Lett 2014;56 (10):2449-51.
  • No related research data.
  • No similar publications.

Share - Bookmark

Funded by projects

  • RCUK | Novel Thermal Management o...

Cite this article

Cookies make it easier for us to provide you with our services. With the usage of our services you permit us to use cookies.
More information Ok