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Publisher: Elsevier Ltd.
Languages: English
Types: Article
Subjects:
Planar Indium Gallium Arsenide (In0.57Ga0.47As) Gunn diode was fabricated on a semi-insulating indium phosphide substrate with on chip matching circuit to enable the extraction of second harmonic in millimeter and terahertz frequencies. The In0.57Ga0.47As planar Gunn diodes were designed with an active length of 4 μm, channel width of 120 μm and integrated with a novel diamond resonator to suppress the fundamental and extract the second harmonic. The experimental results gave good fundamental suppression and extraction of second harmonic (121.68 GHz) with an RF output power of −14.1 dBm. This is highest recorded power at the second harmonic from a planar Gunn diode.
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    • [1] Gunn JB. Microwave oscillations of current in III-V semiconductors. Solid State Commun 1993;88(11-12):883-6.
    • [2] Khalid A, Dunn GM, Pilgrim N, Stanley CR, Thayne IG, Holland M, et al. Planar Gunn-type triode oscillator at 83 GHz. Electron Lett 2007;43(15):837.
    • [3] Khalid A, Pilgrim NJ, Dunn GM, Holland MC, Stanley CR, Thayne IG, et al. A planar gunn diode operating above 100 GHz. IEEE Electron Device Lett 2007;28 (10):849-51.
    • [4] Li C. Design and Characterisation of millimeter-wave planar Gunn diode and integrated circuits. University of Glasgow; 2011.
    • [5] Li C, Khalid A, Paluchowski Caldwell SH, Holland MC, Dunn GM, Thayne IG, et al. Design, fabrication and characterization of InGaAs-channel planar Gunn diodes for millimeter wave applications. Solid State Electron 2011;64 (1):67-72.
    • [6] Khalid A, Li C, Papageogiou V, Dunn GM, Steer MJ, Thayne IG, et al. In0.53Ga0.47As Planar Gunn Diodes operating at a fundamental frequency of 164 GHz. Electron Device Lett IEEE 2013;34(1):39-41.
    • [7] Zhao YY, Wei CJ, Beneking H. Transferred-electron oscillations in In0.53Ga0.47As. Electron Lett 1982;18(19):835.
    • [8] Pérez S, González T, Pardo D, Mateos J. Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes. J Appl Phys 2008;103(9):094516.
    • [9] Maricar MI, Khalid A, Dunn G, Cumming D. Experimentally estimated dead space for GaAs and InP based planar Gunn diodes. Semicond Sci Technol 2014;30. p. 1-5.
    • [10] Maricar MI, Glover J, Evans G, Cumming D, Oxley C. Design and characterization of a novel diamond resonator. Microw Opt Technol Lett 2014;56(7):1691-3.
    • [11] Maricar MI, Glover J, Evans G, Papageorgiou V, Cumming D, Oxley C. Planar Gunn Diode and Resonators. In: 4th Annual seminar on passive RF and microwave components; 2013. p. 2-5.
    • [12] Kowalsky W, Schlachetzki A, Wehmann H-H. Transferred-electron domains in In0.53Ga0.47As in dependence on the the nl product. Solid State Electron 1984;27(2):187-9.
    • [13] Maricar MI, Glover J, Khalid A, Li C, Evans G, Cumming DSR, et al. An AlGaAs/GaAs-based planar Gunn diode oscillator with a fundamental frequency operation of 120 GHz. Microw Opt Technol Lett 2014;56 (10):2449-51.
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