Remember Me
Or use your Academic/Social account:


You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.


Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message


Verify Password:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:

OpenAIRE is about to release its new face with lots of new content and services.
During September, you may notice downtime in services, while some functionalities (e.g. user registration, login, validation, claiming) will be temporarily disabled.
We apologize for the inconvenience, please stay tuned!
For further information please contact helpdesk[at]openaire.eu

fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Vert, Alexey; Orzali, Tommaso; Satyavolu, PapaRao; Whitener, Glenn; Petro, Benjamin (2016)
Publisher: Electrochemical Society
Languages: English
Types: Article
Subjects: QC
Integration of III-V high mobility channel materials in complementary metal oxide semiconductors (CMOS) and III-V photonic materials for integrated light sources on Si substrates requires low defect density III-V buffer layers in order to enable epitaxial growth of high crystal quality active layers. For the fabrication of In0.53Ga0.47As n-channel MOSFET on Si, a lattice matched InP buffer layer is one of the most effective approaches when used in combination with the aspect ratio trapping technique, an integration method known for reducing the density of defects formed during relaxation of strain induced by the lattice mismatch between InP and Si. The InP buffer should be planarized in order to improve thickness uniformity and roughness before subsequent deposition of active layers. In this work we discuss the development of InP planarization on 300 mm Si wafers and investigate slurry composition effects on the final oxide loss and condition of the InP surface. To further explore viability of this approach we deposited an epitaxial In0.53Ga0.47As n-MOS channel layer on top of the planarized InP buffer.

Share - Bookmark

Cite this article

Cookies make it easier for us to provide you with our services. With the usage of our services you permit us to use cookies.
More information Ok