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Zhang, JF; Duan, M; Manut, A; Ji, Z; Zhang, W; Asenov, A; Gerrer, L; Reid, D; Razaidi, H; Vigar, D; Chandra, V; Aitken, R; Kaczer, B; Groeseneken, G
Publisher: IEEE
Languages: English
Types: Unknown
Subjects: TA
As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging process again. This has motivated re-visiting HCA, but recent works have focused on accelerated HCA by raising stress biases and there is little information on HCA under use-biases. Early works proposed that HCA mechanism under high and low biases are different, questioning if the high-bias data can be used for predicting HCA under use-bias. A key advance of this work is proposing a new methodology for evaluating the HCA-induced variation under use-bias. For the first time, the capability of predicting HCA under use-bias is experimentally verified. The importance of separating RTN from HCA is demonstrated. We point out the HCA measured by the commercial Source-Measure-Unit (SMU) gives erroneous power exponent. The proposed methodology minimizes the number of tests and the model requires only 3 fitting parameters, making it readily implementable.
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