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Ng, J.S.; Tan, C.H.; David, J.P.R.; Rees, G.J. (2005)
Languages: English
Types: Article
Subjects:

Classified by OpenAIRE into

arxiv: Physics::Instrumentation and Detectors, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter::Materials Science, Physics::Optics
The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise and breakdown voltage are modeled for avalanche photodiodes (APDs), both with InP and with InAlAs multiplication regions. The calculations allow for dead space effects and for the low field electron ionization observed in InGaAs. The results confirm that impact ionization in the InGaAs absorption layer increases the excess noise in InP APDs and that the effect imposes tight constraints on the doping of the charge control layer if avalanche noise is to be minimized. However, the excess noise of InAlAs APDs is predicted to be reduced by impact ionization in the InGaAs layer. Furthermore the breakdown voltage of InAlAs APDs is less sensitive to ionization in the InGaAs layer and these results increase tolerance to doping variations in the field control layer.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

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    • [5] C. H. Tan, G. J. Rees, P. A. Houston, J. S. Ng, W. K. Ng, and J. P. R. David, “Temperature dependence of electron impact ionization in In Ga As,” Appl. Phys. Lett., vol. 84, no. 13, Mar. 2004.
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    • J. S. Ng (M'99) received the B.Eng. and Ph.D. degrees from the Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, U.K., in 1999 and 2003, respectively. She is currently responsible for characterization within the National Centre for III-V Technologies at the University of Sheffield. Her research interests are avalanche photodiodes, Geiger-mode avalanche photodiodes, and material characterization.
    • C. H. Tan (M'05) was born in Pahang, Malaysia, in 1975. He received the B.Eng. and Ph.D. degrees in electronic engineering from the Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, U.K., in 1998 and 2002, respectively. Currently he is a Lecturer in the Department of Electronic and Electrical Engineering, University of Sheffield. His research activities include experimental and theoretical investigation of excess noise, breakdown, and jitter in Si and III-V APDs and SPADs, design of high-speed APDs and HPTs, and infrared photodetectors.
    • G. J. Rees received the B.A. degree in physics from Oxford University, Oxford, U.K., in 1966 and the Ph.D. degree in theoretical physics from Bristol University, Bristol, U.K., in 1969. He was awarded a one-year Royal Society Exchange Fellowship at the Universita delle Scienze at Rome, Italy, and then lectured for a year in Mathematics at Imperial College, London, U.K. In 1971, he moved to the Plessey Company's Device Research Laboratory at Caswell to head the Theoretical Technology Group. After visiting fellowships to Lund, Sweden and the Clarendon Laboratory, Oxford he joined the Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, U.K., in 1991. He was appointed to a Personal Chair in 1999 and Head of Department in 2001. His research interests include piezoelectric strained layer semiconductor devices, avalanche photodiodes, and modeling of semiconductor device physics.
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