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Sobhani, S.A.; Childs, D.T.; Babazadeh, N.; Stevens, B.J.; Nishi, K.; Sugawara, M.; Takemasa, K.; Hogg, R.A. (2016)
Languages: English
Types: Other
No abstract available.
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    • [1]: D. Bimberg, M. Grundmann, N.N. Ledentsov, Quantum Dot Heterostructures, Wiley, NY (1988).
    • [2] D. Leonard, M. Krishnamurthy, C. Reaves, S. Denbaars, and P. Petroff, “Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces,” Appl. Phys. Lett. 63, 3203 (1993).
    • [3]: S. Fafard, R. Leon, D. Leonard, J. L. Merz, and P. M. Petroff, “Phonons and radiative recombination in self-assembled quantum dots,” Phys. Rev. B 52, 5752 (1995).
    • [4]: N. N. Ledentsov, V. Shchukin, M. Grundmann, N. Kirstaedter, J. Bohrer, O. Schmidt, D. Bimberg, V. M.
    • Ustinov, A. Y. Egorov, A. E. Zhukov, P. S. Kop'ev, S. V. Zaitsev, N. Yu. Gordeev, Z. Alferov, A. Borovkov, A. Kosogov, S. Ruvimov, P. Werner, U. Gosele, and J. Heydenreich, “Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth,” Phys. Rev. B 54, 8743 (1996).
    • [5]: L. Chu, M. Arzberger, G. Bohm, and G. Abstreiter,”Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots,” J. Appl. Phys. 85, 2355 (1999).
    • [6]: Y. Arakawa and S. Sakaki, “Multidimensional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett. 40, 939 (1982).
    • [7]: Q. Xie, A. Kalburge, P. Chen, and A. Madhukar, “Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001),” IEEE Photon. Tech. Lett. 8, 965 (1996).
    • [8]: S. Fathpour, M. Holub, S. Chakrabarti, P. Bhattacharya, "Spin-Polarised Quantum Dot Light-Emitting Diodes with High Polarisation Efficiency at High Temperatures," Electronics Letters, 40, 694 - 695 (2004).
    • [9]: K. Otsubo, N. Hatori, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe,M. Sugawara, and Y.
    • Arakawa, “Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped QuantumDot Lasers without Current Adjustments,” Japanese Jour of Applied Physics, 43 (2004) [10]: R. Sahara, M. Matsuda, H. Shoji, K. Morito, H. Soda, “Proposal for Quantum-Dot Electroabsorption Modulator,” IEEE Photon. Tech. Lett. 8, 1477 (1996).
    • [11]: I. Sandall, J. Ng, J. David, C. Tan, T. Wang, and H. Liu, “1300 nm Wavelength InAs Quantum Dot Photodetector Grown on Silicon,” Opt. Express 20, 10446-10452 (2012) [12]: T. Umezawa, K. Akahane, N. Yamamoto, A. Kanno, T. Kawanishi, "Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications," IEEE Journal of Selected Topics Quant. Electronics, 20, 147-153, (2014).
    • [13]: R.T. Collins, K. Van Klitzing, K. Ploog, “Photocurrent spectroscopy of GaAs/AlxGa1−xAs quantum wells in an electric field,” Phys. Rev. B 33, 4378 (1986).
    • [14]: P. Jin, C. M. Li, Z. Y. Zhang, F. Q. Liu, Y. H. Chen, X. L. Ye, B. Xu, and Z. G. Wang, “Quantumconfined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots,” Appl. Phys.
    • Lett., 85, 2791- 2793 (2004).
    • [15]: P.W. Fry et al., “Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: Observation of a permanent dipole moment,” Physica, E 7, 408 - 412 (2000).
    • [16]: M. Sugawara, R.K. Willardson, E.R. Webber, Self-Assembled InGaAs/GaAs Quantum Dots, Semiconductors and Semimetals, 60, Academic Press (1999).
    • [17]: L. V. Keldysh, “Behavior of non-metallic crystals in strong electric fields,” J. Exp. Theor. Phys. (USSR) 33, 994 (1957); translation Sov. Phys. JETP, 6, 763 (1958).
    • [18] W. Franz, “Einfluß eines elektrischen Feldes auf eine optische Absorptionskante,” Z. Naturforsch., Teil A 13, 484 (1958).
    • [19]: D. A. B. Miller, "Optical Physics of Quantum Wells" in "Quantum Dynamics of Simple Systems," ed.
    • G. -L. Oppo, S. M. Barnett, E. Riis, and M. Wilkinson, Institute of Physics, London, 239-266 (1996).
    • [20]: J. Weiner, D. A. B. Miller, and D. S. Chemla, “Quadratic Electro-Optic Effect due to the QuantumConfined Stark Effect in Quantum Wells,” Appl. Phys. Lett., 50, 842-844 (1987).
    • [21]: G. Bastard, “Wave mechanics applied to semiconductor heterostructures,” Les Editions de Physique, Les Ulis, France, 247-248 (1988).
    • [22]: J. A. Barker and E. P. O'Reilly, “Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots,” Phys. Rev. B, 61, 13840 (2000).
    • [23]: P.W. Fry, I.E. Itskevich, D.J. Mowbray, M.S. Skolnick, J.J. Finley, J.A. Barker, E.P. O'Reilly, L.R.
    • Clark, “Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots,” Phys. Rev. Lett., 84, 334 (2000).
    • [24]: Peng Jin, C. M. Li, Z. Y. Zhang, F. Q. Liu, Y. H. Chen, X. L. Ye, B. Xu, and Z. G. Wang, “Quantumconfined Stark effect and built-in dipole moment in self-assembled InAs ⁄ GaAs quantum dots,” Appl. Phys.
    • Lett., 85, 2791 (2004).
    • [25]: D. A. B. Miller, J. S. Weiner and D. S. Chemla, "Electric Field Dependence of Linear Optical Properties in Quantum Well Structures: Waveguide Electroabsorption and Sum Rules," IEEE J. Quantum Electron. QE - 22, 1816-1830 (1986).
    • [26]: I Bar-Joseph, C. Klingshirn, D.A.B. Miller, D.S. Chemla, U. Koren, B.I. Miller, “Quantum‐confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy,” Appl. Phys. Lett., 50, 1010-1012 (1987).
    • [27]: T.E. Van Eck, P. Chu, W. Chang, H. Wieder, “Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure,” Appl. Phys. Lett., 49, 135-136 (1986).
    • [28]: T. Miyazawa, S. Tarucha, Y. Ohmori, Y. Suzuki, and H. Okamoto “Observation of Room Temperature Excitons in GaSb-AlGaSb Multi-Quantum Wells,” Japanese J. of Appl. Phys., 25, (1986).
    • [29]: K. Sato, I. Kotaka, K. Wakita, Y. Kondo, M. Yamamoto, “Strained-InGaAsP MQW electroabsorption modulator integrated DFB laser,” Electronics Lett., 29 (1993) [30] K. Wakita, I. Kotaka, O. Mitomi, H. Asai, Y. Kawamura, and M. Naganuma, “High-speed InGaAlAs /InAlAs Multiple Quantum Well Optical Modulators,” J. of Lightwave Tech., 8 (1990) [31]: P. Yuan, K. A. Anselm, C. Hu, H. Nie, C. Lenox, A. L. Holmes, B. G. Streetman, J. C. Campbell, and R. J. McIntyre, “A New Look at Impact Ionization - Part II: Gain and Noise in Short Avalanche Photodiodes,” IEEE Tran. On Electron Devices, 46, 1632 (1999).
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