Remember Me
Or use your Academic/Social account:


Or use your Academic/Social account:


You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.


Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message


Verify Password:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:
fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Williams, J. P.; Westwood, David I.; Sobiesierski, Zbigniew; Aubrey, J. E. (1994)
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC
A study of the growth by molecular‐beam epitaxy of Si‐doped n ‐type GaAs on the GaAs(201) surface is presented. The motivation for attempting growth on this particular plane, apart from fundamental considerations, is in connection with an investigation of off‐axis transport in GaAs. The effects of growth temperature and doping on GaAs(201) and GaAs(100) samples have been compared using the Hall effect, low‐temperature photoluminescence (PL), and Nomarski interference contrast microscopy. These studies showed that the PL, onset of conduction, and mobility behavior were very similar for both orientations. It was possible to dope n‐GaAs/GaAs(201) reliably from NSi∼4×1014 to 6×1018 cm−3, the highest mobility of 96 000 cm2 V−1 s−1 measured at 77 K, being obtained for a sample doped at NSi∼4×1014 cm−3.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • 'R. Niitzel and K. Ploog, J. Vat. Sci. Technol. B 10, 2034 (1992).
    • 'R Niitzel, D. Eissler, and K. Ploog, J. Cryst. Growth 127, 1068 (1993).
    • 3Z. V. Popovic, M. Cardona, L. Tapfer, K. Ploog, E. Richter, and D.
    • Strauch, Appl. Phys. Lett. 541, 9 (1989).
    • 'P. S. K. Yick, Ph.D. thesis, University of Wales, 1990.
    • “J. E. Aubrey, G. P. Yick, and D. I. Westwood, Electron. Lett. 28, 432 (1992).
    • “D. I. Westwood, D. A. Woolf, and R. H. Williams, J. Cryst. Growth 98, 782 (1989).
    • 'D.A. Woolf, Z. Sobiesierski, D. I. Westwood, and R. H. Williams, J. Appl. Phys. 71, 4908 (1992).
    • “S. M. Newstead, R. A. A. Kubiak, and E. H. C. Parker, J. Cryst. Growth 81, 49 (1987).
    • “T. Murotani, T. Shimanoe.,and S. Mitsui, J. Cryst. Growth 45, 302 (1978).
    • “M Ilegems in Properties ofIII-VLayers, The Technology and Physics of MBE, edited by E. C. H. Parker (Plenum, New York, 1985).
    • '*H. Kiinzel and K. Ploog, Appl. Phys. Lett. 37, 416 (1980).
    • I'D. A. Woolf, J. P. Williams, D. I. Westwood, Z. Sobiesierski, J. E. Auhrey, and R H. Wiliams, J. Cryst. Growth 127, 913 (1993).
    • 13R. Niitzel, L. Daweritz, and K. Ploog, Phys. Rev. B 46, 4736 (1992).
    • t4A. H. Kean, M. C. Holland, C. R. Stanley, J. Cryst. Growth 127, 904 (1993).
    • “L T. P.Allen, E. R. Weber, J. Washburn, and Y. C. Pao, AppI. Phys. Lett. 51, 670 (1987).
  • No related research data.
  • No similar publications.

Share - Bookmark

Cite this article