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Williams, J. P.; Westwood, David I.; Sobiesierski, Zbigniew; Aubrey, J. E. (1994)
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC
Identifiers:doi:10.1063/1.357056
A study of the growth by molecular‐beam epitaxy of Si‐doped n ‐type GaAs on the GaAs(201) surface is presented. The motivation for attempting growth on this particular plane, apart from fundamental considerations, is in connection with an investigation of off‐axis transport in GaAs. The effects of growth temperature and doping on GaAs(201) and GaAs(100) samples have been compared using the Hall effect, low‐temperature photoluminescence (PL), and Nomarski interference contrast microscopy. These studies showed that the PL, onset of conduction, and mobility behavior were very similar for both orientations. It was possible to dope n‐GaAs/GaAs(201) reliably from NSi∼4×1014 to 6×1018 cm−3, the highest mobility of 96 000 cm2 V−1 s−1 measured at 77 K, being obtained for a sample doped at NSi∼4×1014 cm−3.
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