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Wang, D.Q.; Hamilton, A.R.; Farrer, I.; Ritchie, D.A.; Klochan, O. (2016)
Publisher: IOP Publishing
Languages: English
Types: Article
Subjects:

Classified by OpenAIRE into

arxiv: Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter::Materials Science
We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode AlxGa1-xAs/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling.
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