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Cheng, B.J; Roy, S.; Roy, G.; Asenov, A. (2003)
Publisher: Institute of Electrical and Electronics Engineers
Languages: English
Types: Other
Subjects: TK

Classified by OpenAIRE into

arxiv: Computer Science::Hardware Architecture
ACM Ref: Hardware_PERFORMANCEANDRELIABILITY, Hardware_INTEGRATEDCIRCUITS
MOSFET parameter fluctuations, resulting from the 'atomistic' granular nature of matter, are predicted to be a critical roadblock to the scaling of devices in future electronic systems. A methodology is presented which allows compact model based circuit analysis tools to exploit the results of 'atomistic' device simulation, allowing investigation of the effects of such fluctuations on circuits and systems. The methodology is applied to a CMOS inverter, ring oscillator, and analogue NMOS current mirror as simple initial examples of its efficacy.
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