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Ray, S.K.; Groom, K.M.; Hogg, R.A.; Liu, H.Y.; Hopkinson, M.; Badcock, T.; Mowbray, D.J.; Skolnick, M.S. (2005)
Languages: English
Types: Article
Subjects:
In this letter, we demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-mu/m quantum dot laser. The introduction of a shallow ridge etch design and selective electroplating of the gold bondpads is demonstrated to offer improved performance in comparison to a deep ridge etch design with thinner evaporated gold bondpads.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

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    • [5] H. Y. Liu, I. R. Sellers, M. Gutierrez, K. M. Groom, W. M. Soong, M. Hopkinson, J. P. R. David, R. Beanland, T. J. Badcock, D. J. Mowbray, and M. S. Skolnick, “Influence of the spacer layer growth temperature on multiplayer InAs/GaAs quantum dot structure,” J. Appl. Phys., vol. 96, pp. 1988-1992, 2004.
    • [6] S. K. Ray, K. M. Groom, H. Y. Liu, M. Hopkinson, R. A. Hogg, I. R. Seller, T. Badcock, A. J. Ramsay, D. J. Mowbray, and M. S. Skolnick, “Growth, fabrication and operating characteristics of ultra-low threshold 1.31 m quantum dot lasers,” Jpn. J. Appl. Phys., vol. 44, no. 4B, pp. 2520-2522, 2005, to be published.
    • [7] A. Markus, J. X. Chen, C. Paranthoen, C. Platz, O. Gauthier-Lafaye, and A. Fiore, “Simultaneous two-state lasing in quantum dot lasers,” Appl. Phys. Lett., vol. 82, pp. 1818-1820, 2003.
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