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Ray, S.K.; Groom, K.M.; Hogg, R.A.; Liu, H.Y.; Hopkinson, M.; Badcock, T.; Mowbray, D.J.; Skolnick, M.S. (2005)
Languages: English
Types: Article
In this letter, we demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-mu/m quantum dot laser. The introduction of a shallow ridge etch design and selective electroplating of the gold bondpads is demonstrated to offer improved performance in comparison to a deep ridge etch design with thinner evaporated gold bondpads.
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