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Palmer, M.J.; Braithwaite, G.; Prest, M.J.; Parker, E.H.C.; Whall, T.E.; Zhao, Y.P.; Kaya, S.; Watling, J.R.; Asenov, A.; Barker, J.R.; Waite, A.M.; Evans, A.G.R. (2001)
Publisher: Institute of Electrical and Electronics Engineers
Languages: English
Types: Other
Subjects: TJ
No abstract avaliable.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • [1] T. E. Whall and E. H. C. Parker, “SiGe heterostructures for FET applications” J. Phys. D. Vol 31, 1998, pp. 1397-1416.
    • [2] S. P. Voignegescu, C. A. T. Salama, J. P. Noel, and T. L. Kamins, “Si/SiGe Heterostructure p-MOSFET with Triangular Ge Channel Profiles”, Proc. International Elec. Device Meeting (IEDM), New York, 1994, pp. 369.
    • [3] T. Vogelsang, F. Hofmann, H. Schäfer, L. Risch and K. Hofmann, “Modelling and Fabrication of a P-Channel SiGeMOSFET with Very High Mobility and Transconductance”, Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 877- 879.
    • [4] V. P. Kesan, S. Subbanna, P. J. Restle, M. J. Tejwani, J. M. Aitken, S. S. Iyer and J. A. Ott, “High Performance 0.25 µm p-MOSFETs with Silicon-Germanium Channels for 300K and 77K Operation”, Proc. International Elec. Device Meeting (IEDM), 1991, pp. 25-28.
    • [5] J. Alieu, T. Skotnikii, J. L. Regoli and G. Bremond, “Multiple SiGe Quantum Wells - Novel Channel Architecture for 0.12µm CMOS”, Proc. of 29th European Solid-state Device Research Conference (ESSDERC), Leuven, Belgium, Sept 1999, pp. 292-295.
    • [6] Y. C. Yeo, V. Sabramanian, J. Kedzierski, P. Xuan, T.- J. King, J. Bokor and C. Hu, “Nanoscale Ultra-Thin-Body Silicon-on-Insulator p-MOSFET with SiGe/Si Heterostructure Channel”, IEEE Electron Device Lett., Vol 21, 2000, pp. 161- 163.
    • [7] S. Kaya, Y. P. Zhao, J. R. Watling, A. Asenov, J. R. Barker, G. Ansaripour, G. Braithwaite, T. E. Whall and E. H. C. Parker, “Indication of Velocity Overshoot in Strained Si0.8Ge0.2 p-Channel MOSFETs”, Semi. Sci. Tech., Vol 15, 2000, pp. 573-578.
    • [8] Y. P. Zhao, S. Kaya, J. R. Watling, A. Asenov, J. R. Barker, M. Palmer, G. Braithwaite, T. E. Whall, E. H. C. Parker, A. Waite and A. G. R. Evans, “Indication of Nonequilibrium Transport in SiGe p-MOSFETs”, Proc. of 30th European Solid-state Device Research Conference (ESSDERC), Cork, Ireland, 11-13 Sep 2000,.pp. 224-227.
    • [9] M. J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, M. J. Prest, E. H. C. Parker, T. E. Whall, C. P. Parry, A. M. Waite, A. G. R. Evans, S. Roy, J. R. Watling, S. Kaya and A. Asenov, “Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers”, Appl. Phys. Letters, Vol 78, 2001, pp. 1424-1426.
    • [10] MEDICI from Avant! Corporation, http://www.avanticorp.com/, Fremont, CA.
    • [11] T. E. Whall and E. H. C. Parker, “Si/SiGe/Si pMOS performance - alloy scattering and other considerations”, Thin Solid Films, Vol 369, 2000, pp. 297-305.
    • [12] M. J. Kearney and A. I. Horrell, “The effect of alloy scattering on the mobility of holes in a Si1-xGex quantum well”, Semi. Sci. Tech., Vol 13, 1998, pp. 174-180.
    • [13] J. M. Hinckley and J. Singh, “Hole Transport Theory in Pseudomorphic Si1-xGex Alloys Grown on Si(001) Substrates”, Phys. Rev. B, Vol 41, 1990, pp. 2912-2926.
    • [14] F. M. Bufler and B. Meinerzhagen, “Hole transport in strained Si1-xGex alloys on Si1-yGey substrates”, J. Applied Physics, Vol 84, 1998, pp. 5597-5602.
    • [15] J. B. Roldan, F. Gamiz, J.A. Lopez-Villanueva and J. E. Carceller, “Modeling Effects of Electron-Velocity Overshoot in a MOSFET”, IEEE Trans. Electron Devices, Vol 44, 1997, pp. 841-846.
    • [16] K. K. Thornber, “Currrent Equations for Velocity Overshoot”, IEEE Electron Device Lett., Vol 3, 1982, pp. 69- 71.
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