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Richards, R.D.; Hunter, C.J.; Bastiman, F.; Mohmad, A.R.; David, J.P.R. (2016)
Publisher: Institution of Engineering and Technology
Languages: English
Types: Other
GaAsBi light emitting diodes containing ∼6% Bi are grown on GaAs substrates. Good room-temperature electroluminescence spectra are obtained at current densities as low as 8 Acm − 2. Measurements of the integrated emitted luminescence suggest that there is a continuum of localised Bi states extending up to 75 meV into the bandgap, which is in good agreement with previous photoluminescence studies. X-ray diffraction analysis shows that strain relaxation has probably occurred in the thicker samples grown in this study.
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