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Speckbacher, P.; Berger, J.; Asenov, A.; Koch, D.; Weber, W. (1995)
Publisher: Institute of Electrical and Electronics Engineers
Languages: English
Types: Article
Subjects: TK
This paper describes a new measurement technique, the forward gated-diode current characterized at low drain voltages to be applied in MOSFET's for investigating hot-carrier stress-induced defects at high spatial resolution. The generation/recombination current in the drain-to-substrate diode as a function of gate voltage, combined with two-dimensional numerical simulation, provides a sensitive tool for detecting the spatial distribution and density of interface defects. In the case of strong accumulation, additional information is obtained from interband tunneling processes occurring via interface defects. The various mechanisms for generating interface defects and fixed charges at variable stress conditions are discussed, showing that information complementary to that available from other methods is obtained
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

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    • Peter Speckbacher was born in Traunstein, Germany, in 1960. He received the Dipl. Phys. degree in 1989 and the Dr. rer. nat. degree in 1992, both from the Technische Universitat Munchen.
    • From 1989 to 1992, he was working toward the Dr. rer. nat. degree under a cooperative program with the Research Laboratories of Siemens AG, Munich and Daimler Benz AG, Ulm. His dissertation investigated the research of hot-carrier effects in MOS devices. Since 1990, he has been with the Research Laboratories of Dr. Johannes Heidenhain GmbH, Traunreut, Germany, were he is engaged in electron-hcdm-lithography and optical-lithography. His research interests and activitia are focussed on the development of solid-state integrated sensors, integrated optical devices, fabrication and application of mixo- and nanostructures.
    • Josef Berger was born in Watzendorf, Germany, in 1963. He received the Dipl. Phys. degree from the Technische Universitat Munchen in 1991. His Master's thesis research involved the study of hotcarrier effects in MOS devices.
    • He joined the Bayerische Versicherungskammer, Germany, in 1993 were he has k e n engaged in the development of ecological pl:c,.ning and environmental protection.
    • Frederick Koch was born in Berlin, Germany on January 6, 1937. He received the B.A. from New York University in 1958, and the Ph.D. in physics from the University of California, Berkeley in 1962.
    • He was an Assistant Professor at Berkeley from 1962 to 1963, and an Assistant Full Professor, University of Maryland, College Park, from 1963 to 1972. Since 1972, he has been a Professor of Physics, Technical University Miinchen, Munich, Germany. His research interests are in semiconductor physics and devices with emphasis on surface and interfacial phenomena.
    • Werner Weber was born in Ruhstorf, Germany, in 1952. He received the Dipl. Phys. degree from the Technische Universittit Miinchen in 1976 and the Dr. rer. nat. degree from the Ludwig-MaximiliansUniversittit Miinchen in 1981.
    • In 1981, he was on a one-year assignment at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, where he worked in the field of semiconductor thin films. Since 1983, he has been with the Research Laboratories of Siemens AG, Munich, Germany. He is engag-ed in MOS _phy_sics I and basic circuit design and has authored or co-authored over 60 papers. In 1992, he received the award of the German Information Technology Society for a publication on physical effects of hot-camer degradation. Since 1995, he has been managing a project on basic circuits in nonvolatile memories. , Dr. Weber is a member of the German Physical Society ( D E ) and the German Information Technology Society (ITG).
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