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Speckbacher, P.; Berger, J.; Asenov, A.; Koch, D.; Weber, W. (1995)
Publisher: Institute of Electrical and Electronics Engineers
Languages: English
Types: Article
Subjects: TK
This paper describes a new measurement technique, the forward gated-diode current characterized at low drain voltages to be applied in MOSFET's for investigating hot-carrier stress-induced defects at high spatial resolution. The generation/recombination current in the drain-to-substrate diode as a function of gate voltage, combined with two-dimensional numerical simulation, provides a sensitive tool for detecting the spatial distribution and density of interface defects. In the case of strong accumulation, additional information is obtained from interband tunneling processes occurring via interface defects. The various mechanisms for generating interface defects and fixed charges at variable stress conditions are discussed, showing that information complementary to that available from other methods is obtained
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    • S. A. Abbas and R. C. Dockerty, “l\i-channel IGFET design limitations due to hot-electron trapping,” IEDM Tech. Dig., p. 35, 1975.
    • A. Asenov, M. Bollu, F. Koch and J. Scholz, “On the nature and energy distribution of defect states caused by hot electrons in Si,” Appl. Surf Sci., vol. 30, p. 319, 1987.
    • A. V. Schwerin, W. Hansch and W. Weber, “The relationship between oxide charge and device degradation: A comparative study of 71- and p-channel MOSFET's,” IEEE Trans. Electron Devices, vol. ED-34, p.
    • G. Groesenecken, H. E. Maes, N.Beltran and R. F. De Keersmaecker, “A reliable approach to charge-pumping measurements in MOStransistors,” fEEE Trans. Electron Devices, vol. ED-31, p. 42, 1984.
    • M. G. Ancona, N. S . Saks and D. Mc. Carthy, “Lateral distribution of hot-camer induced interface traps in MOSFET's,” fEEE Trans. Electron Devices, vol. 35, p. 2221, 1988.
    • A. S. Grove and D. J. Fitzgerald, “Surface effects on p - n junctions: Characteristics of surface space-charge regions under nonequilibrium conditions,” Solid-State Electr., vol. 9, p. 783, 1966.
    • T. Giebel and K. Goser, “Hot-carrier degradation of rz-channel MOSFET's characterized by a gated-diode measurement technique,” IEEE Electron Device Lett., vol. 10, p. 76, 1989.
    • A. Acovic, M. Dutoit and M. Ilegems, “Characterization of hot-electronstressed MOSFET's by low-temperature measurements of the drain tunnel current,” IEEE Trans. Electron Devices, vol. ED-37, p. 1467, 1990.
    • P. Speckbacher, A. Asenov, M. Bollu, F. Koch and W. Weber, “Hotcarrier-induced deep-level defects from gated-diode measurements on MOSFET's,” fEEE Electron Device Lett., vol. 1 1 , p. 95, 1990.
    • A. Asenov, J. Berger, P. Speckbacher, F. Koch and W. Weber, “Spatially-resolved measurements of hot-carrier generated defects at the Si-Si02 interface,” in Proc. INFOS '91, W. Eccleston, M. Uren, Eds. New York: Adam Hilger, 1991, p. 247.
    • S. M. Sze, Physics ofsemiconductor Devices, 2nd ed., 1981.
    • T. Poorter and P. Zoestbergen, “Hot carrier effects in MOS transistors,'' IEDM Tech. Dig., p. 100, 1984.
    • H. Haddara and S. Cnstoloveanu, Solid-State Electron., vol. 29, p. 767, 1986.
    • M. K. Orlowski and C. Werner, “Model for the electric fields in LDD MOSFET's-Part 11: Field distribution on the drain side,” IEEE Trans.
    • Electron Devices, vol. 36, p. 382, 1989.
    • ESSDERC '91.
    • S. Banerjee, D. Coleman, W. Richardson and A. Shah, “Leakage mechanisms in the trench transistor DRAM cell ” IEEE Trans. Electron Devices, vol. 35, p. 108, 1988.
    • G . Q. Lo, A. B. Joshi and Dim-Lee Kwong, “klot-carrier-stress effects on gate-induced drain leakage current in wchannel MOSFET's,” IEEE Trans. Electron Device Lett., vol. 12, p. 5, 1991.
    • J. Y. Choi, P. K. KO, C. Hu and W. F. Scott, “Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors oxide charge versus interface traps.” J. AppL Phys., vol. 65, no. 1, p. 354, 1989.
    • A. Acovic, M. Dutoit and M. Ilegams, “Characterization of hot-electronstressed MOSFET's by low temperature measurements of the drain tunnel current,'' fEEE Trans. Elecrron Deviczs, vol. 37. p. 1467, 1990.
    • E. 0. Kane, “Theory of tunneling.” J. Appl. Phys., vol. 32, p. 83, 1961.
    • A. G. Chynoweth, W. L. Feldman and R. A. Logan. “Ionization rates for electrons and holes in Silicon,” Phys. Rev., vol. I1I , p. 684, 1961.
    • P. N. Butcher, K. F. Hulme and J. R. Morgan, Solrrl-Srate Electron., vol. 3, p. 358, 1962.
    • S. A. Lyon, Appl. Surf: Sci., vol. 39, p. 552, 1989.
    • P. Heremans, R. Bellens, G. Groesenecken and H. E. Maes, “Consistent model for the hot-carrier degradation in wchannel and 11-channel MOSFET's,” IEEE Trans. Electron Devices, vol. 35. p. 2194, 1988.
    • W. Hansch, A. V. Schwerin and F. Hofmann, “A new self-consistent approach to investigating MOSFET degradation,” f E E E Electron Device Letr., vol. 11, p. 362, 1990.
    • Peter Speckbacher was born in Traunstein, Germany, in 1960. He received the Dipl. Phys. degree in 1989 and the Dr. rer. nat. degree in 1992, both from the Technische Universitat Munchen.
    • From 1989 to 1992, he was working toward the Dr. rer. nat. degree under a cooperative program with the Research Laboratories of Siemens AG, Munich and Daimler Benz AG, Ulm. His dissertation investigated the research of hot-carrier effects in MOS devices. Since 1990, he has been with the Research Laboratories of Dr. Johannes Heidenhain GmbH, Traunreut, Germany, were he is engaged in electron-hcdm-lithography and optical-lithography. His research interests and activitia are focussed on the development of solid-state integrated sensors, integrated optical devices, fabrication and application of mixo- and nanostructures.
    • Josef Berger was born in Watzendorf, Germany, in 1963. He received the Dipl. Phys. degree from the Technische Universitat Munchen in 1991. His Master's thesis research involved the study of hotcarrier effects in MOS devices.
    • He joined the Bayerische Versicherungskammer, Germany, in 1993 were he has k e n engaged in the development of ecological pl:c,.ning and environmental protection.
    • Frederick Koch was born in Berlin, Germany on January 6, 1937. He received the B.A. from New York University in 1958, and the Ph.D. in physics from the University of California, Berkeley in 1962.
    • He was an Assistant Professor at Berkeley from 1962 to 1963, and an Assistant Full Professor, University of Maryland, College Park, from 1963 to 1972. Since 1972, he has been a Professor of Physics, Technical University Miinchen, Munich, Germany. His research interests are in semiconductor physics and devices with emphasis on surface and interfacial phenomena.
    • Werner Weber was born in Ruhstorf, Germany, in 1952. He received the Dipl. Phys. degree from the Technische Universittit Miinchen in 1976 and the Dr. rer. nat. degree from the Ludwig-MaximiliansUniversittit Miinchen in 1981.
    • In 1981, he was on a one-year assignment at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, where he worked in the field of semiconductor thin films. Since 1983, he has been with the Research Laboratories of Siemens AG, Munich, Germany. He is engag-ed in MOS _phy_sics I and basic circuit design and has authored or co-authored over 60 papers. In 1992, he received the award of the German Information Technology Society for a publication on physical effects of hot-camer degradation. Since 1995, he has been managing a project on basic circuits in nonvolatile memories. , Dr. Weber is a member of the German Physical Society ( D E ) and the German Information Technology Society (ITG).
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