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Qian, H.; Lee, K.B.; Vajargah, S.H.; Novikov, S.V.; Guiney, I.; Zaidi, Z.H.; Jiang, S.; Wallis, D.J.; Foxton, C.T.; Humphreys, C.J.; Houston, P.A. (2017)
Publisher: Elsevier
Languages: English
Types: Article
Subjects: A1. Wet etching, A1. Semi-polar (11-22) GaN, Inorganic Chemistry, A3. Molecular beam epitaxy, B1. AlGaN/GaN, Condensed Matter Physics, Materials Chemistry, A3. Metalorganic chemical vapour deposition, B3. Vertical Heterostructure Field E ff ect Transisto (VHFET)
A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel. This work was funded by the Engineering and Physical Sciences Research Council (EPSRC), United Kingdom, under EP/K014471/1 (Silicon Compatible GaN Power Electronics).
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