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Kalna, K.; Roy, S.; Asenov, A.; Elgaid, K.; Thayne, I. (2000)
Publisher: Institute of Electrical and Electronics Engineers
Languages: English
Types: Other
Subjects: TK
No abstract avaliable.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • [1] S. Babiker, A. Asenov, J. R. Barker, and S. P. Beaumont, "Finite element Monte Carlo simulation of recess gate compound FETs", Solid St. Electron. 39 (1996) pp. 629-635.
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    • [5] S. Babiker, A. Asenov, S. Roy, and S. P. Beaumont, "Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study", Solid St. Electron. 43 (1999) pp. 1281-1288.
    • [6] S. Babiker, A. Asenov, N. Cameron S. P. Beaumont, "A simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs", IEEE Trans. Electron Devices 43 (1996) pp. 2032- 2034.
    • [7] H. Kim, H.S. Min, T.W. Tang, Y.J. Park, "An Extended Proof of the Ramo-Shockley Theorem", Solid St. Electron. 43 (1991) p 1251.
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