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Califano, M.; Harrison, P. (2002)
Publisher: American Institute of Physics
Languages: English
Types: Article
We present a systematic investigation of the strain distribution of self-assembled pyramidal In1-xGaxAs/GaAs and SixGe1-x/Si quantum dots for the case of growth on a (001) substrate. The dependence of the biaxial and hydrostatic components of the strain on the quantum dot volume, aspect ratio, composition, and percentage of alloying x is studied using a method based on a Green's function technique. The dependence of the carriers' confining potentials and the electronic effective mass on the same parameters is then calculated in the framework of eight-band k .p theory. The results for which comparable published data are available are in good agreement with the theoretical values for strain profiles, confining potentials, and electronic effective mass. © 2002 American Institute of Physics. \ud \ud
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