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Elsner, J; Jones, R; Sitch, P K; Porezag, V D; Elstner, M; Frauenheim, Th; Heggie, M I; Oberg, S; Briddon, P R (1997)
Publisher: Physical Review Letters
Languages: English
Types: Article

Classified by OpenAIRE into

arxiv: Condensed Matter::Materials Science
The atomic structures, electrical properties, and line energies for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (1010) surfaces.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • 1 sGa33coord.d
    • 2 sN33coord.d
    • 3 sGa43coord.d
    • 4 sN43coord.d
    • 1 sGa33coord.d
    • 2 sN33coord.d
    • 3 sGa43coord.d
    • 4 sN43coord.d *On leave from Technische Universität Chemnitz.
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