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Cho, S.J.; Roberts, J.W.; Guiney, I.; Li, X.; Ternent, G.; Floros, K.; Humphreys, C.J.; Chalker, P.R.; Thayne, I.G. (2015)
Publisher: Elsevier BV
Journal: Microelectronic Engineering
Languages: English
Types: Article
Subjects: Condensed Matter Physics, TK, Surfaces, Coatings and Films, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics
The impact of subjecting a n-GaN surface to an in-situ argon plasma in an atomic layer deposition (ALD)\ud tool immediately before deposition of an Al2O3 dielectric film is assessed by frequency dependent\ud evaluation of Al2O3/GaN MOSCAPs. In comparison with a control with no pre-treatment, the use of a\ud 50 W argon plasma for 5 min reduced hysteresis from 0.25 V to 0.07 V, frequency dispersion from\ud 0.31 V to 0.03 V and minimum interface state density (Dit) as determined by the conductance method\ud from 6.8 1012 cm2 eV1 to 5.05 1010 cm2 eV1\ud .\ud 201
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

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