Remember Me
Or use your Academic/Social account:


Or use your Academic/Social account:


You have just completed your registration at OpenAire.

Before you can login to the site, you will need to activate your account. An e-mail will be sent to you with the proper instructions.


Please note that this site is currently undergoing Beta testing.
Any new content you create is not guaranteed to be present to the final version of the site upon release.

Thank you for your patience,
OpenAire Dev Team.

Close This Message


Verify Password:
Verify E-mail:
*All Fields Are Required.
Please Verify You Are Human:
fbtwitterlinkedinvimeoflicker grey 14rssslideshare1
Cho, S.J.; Roberts, J.W.; Guiney, I.; Li, X.; Ternent, G.; Floros, K.; Humphreys, C.J.; Chalker, P.R.; Thayne, I.G. (2015)
Publisher: Elsevier BV
Journal: Microelectronic Engineering
Languages: English
Types: Article
Subjects: Condensed Matter Physics, TK, Surfaces, Coatings and Films, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics
The impact of subjecting a n-GaN surface to an in-situ argon plasma in an atomic layer deposition (ALD)\ud tool immediately before deposition of an Al2O3 dielectric film is assessed by frequency dependent\ud evaluation of Al2O3/GaN MOSCAPs. In comparison with a control with no pre-treatment, the use of a\ud 50 W argon plasma for 5 min reduced hysteresis from 0.25 V to 0.07 V, frequency dispersion from\ud 0.31 V to 0.03 V and minimum interface state density (Dit) as determined by the conductance method\ud from 6.8 1012 cm2 eV1 to 5.05 1010 cm2 eV1\ud .\ud 201
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • [1] Y. Yue, Y. Hao, J. Zhang, J. Ni, W. Mao, Q. Feng, L. Liu, IEEE Electron Device Lett. 29 (2008) 838-840.
    • [2] K.M. Bothe, P.A. Von Hauff, A. Afshar, A.F. Abari, K.C. Cadien, D.W. Barlage, IEEE Trans. Electron Devices 60 (2013) 4119.
    • [3] G. Ye, H. Wang, S. Arulkumaran, G.I. Ng, R. Hofstetter, Y. Li, M.J. Anand, K.S. Ang, Y.K.T. Maung, S.C. Foo, Appl. Phys. Lett. 103 (2013) 142109.
    • [4] Y.C. Chang, M.L. Huang, Y.H. Chang, Y.J. Lee, H.C. Chiu, J. Kwo, M. Hong, Microelectron. Eng. 88 (2011) 1207.
    • [5] Y. Hori, Z. Yatabe, T. Hashizume, J. Appl. Phys. 114 (2013) 244503.
    • [6] A. Chakroun, H. Maher, E.A. Alam, A. Souifi, V. Aimez, R. Ares, A. Jaouad, IEEE Electron Device Lett. 35 (2014) 318.
    • [7] Q. Feng, Y. Tian, Z.W. Bi, Y.Z. Yue, J.Y. Ni, J.C. Zhang, Y. Hao, L.A. Yang, Chin. Phys. B 18 (2009) 3014.
    • [8] B. Shin, J.B. Clemens, M.A. Kelly, A.C. Kummel, P.C. McIntyre, Appl. Phys. Lett. 96 (2010) 252907.
    • [9] D.K. Schroder, Semiconductor Material and Device Characterization, third ed., John Wiley & Sons Inc., Hoboken, New Jersey, 2006.
    • [10] Z.Q. Fang, Appl. Phys. Lett. 72 (1998) 2277.
    • [11] A. Cremades, L. Görgens, O. Ambacher, M. Stutzmann, Phys. Rev. B 61 (2000) 2812.
  • No related research data.
  • No similar publications.

Share - Bookmark

Cite this article