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Lynch, Stephen Anthony; Bates, R.; Paul, D. J.; Norris, D. J.; Cullis, A. G.; Ikonic, Z.; Kelsall, R. W.; Harrison, P.; Arnone, D. D.; Pidgeon, C. R. (2002)
Publisher: American Institute of Physics
Languages: English
Types: Article
Subjects: QC

Classified by OpenAIRE into

arxiv: Astrophysics::High Energy Astrophysical Phenomena, Physics::Optics
Identifiers:doi:10.1063/1.1501759
The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.

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