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Fay, Mike W.; Moldovan, Grigore; Harrison, Ian; Balmer, R.S.; Soley, D.E.J.; Hilton, K.P.; Hughes, B.T.; Uren, M.J.; Martin, T.; Brown, Paul D. (2003)
Publisher: IOP Publishing Ltd
Languages: English
Types: Part of book or chapter of book
Ti and Pd barrier layers between the Al/Ti diffusion couple and the Au capping layer of multilayer ohmic contacts to n-type AlGaN/GaN field effect transistors were found to be ineffective in preventing the diffusion of Au to the AlGaN following high temperature rapid thermal annealing. The formation of a band of TiN grains at the contact/AlGaN interface is responsible for the activation of the contact. The presence of interfacial Au and threading dislocations are implicated in the formation of additional Ti-nitride inclusions into the AlGaN, although these do not appear to disrupt the Ti-nitride layer at the original contact/nitride interface, nor significantly influence the contact resistance.
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    • Bright A N, Thomas P J, Weyland M, Tricker D M, Humphreys C J and Davies R 2001, J. Appl. Phys. 89, 3143 Cai S J, Li R, Chen Y L, Wong, L, Wu W G, Thomas S G, Wang K L 1998, Electron. Lett. 34, 2354 Chor E F, Zhang D, Gong H, Chen G L, and Liew T Y F 2001, J. Appl. Phys. 90, 1242 Fan Z F, Mohammad S N, Kim W, Aktas O, Botchkarev A E, Kim W and MorkoƧ H 1996, Appl. Phys. Lett. 68, 1672 Fay M W, Moldovan G, Brown P D, Harrison I, Birbeck J C, Hughes B T, Uren M J and Martin T 2002, J. Appl. Phys. 92, 94 Mohammad S N, Fan Z F, Salvador A, Aktas O, Botchkarev A E, Kim W and MorkoƧ H 1996, Appl. Phys. Lett. 69 1420
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