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Hasbullah, N.F.; Ng, Jo Shien; Liu, Hui-Yun; Hopkinson, M.; David, J.; Badcock, T.J.; Mowbray, D.J. (2008)
Publisher: Institute of Electrical and Electronics Engineers
Languages: English
Types: Article
Electroluminescence (EL) measurements have been performed on a set of In(Ga)As-GaAs quantum-dot (QD) structures with varying spacer layer growth temperature. At room temperature and low injection current, a superlinear dependence of the integrated EL intensity (IEL) on the injection current is observed. This superlinearity decreases as the spacer layer growth temperature increases and is attributed to a reduction in the amount of nonradiative recombination. Temperature-dependent IEL measurements show a reduction of the IEL with increasing temperature. Two thermally activated quenching processes, with activation energies of ˜ 157 meV and ˜ 320 meV, are deduced and these are attributed to the loss of electrons and holes from the QD ground state to the GaAs barriers. Our results demonstrate that growing the GaAs barriers at higher temperatures improves their quality, thereby increasing the radiative efficiency of the QD emission.
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    • Nurul F. Hasbullah received the B.Eng. degree in electrical and electronic engineering from Cardiff University, Wales, U.K., in 2001. Between 2002 and 2004 she worked in Malaysia in the semiconductor industry and as an academic. She is currently working towards the Ph.D. degree in electronic and electrical engineering at the University of Sheffield, Sheffield, U.K., focusing on the electrical and optical characterization of quantum-dot laser structures.
    • Jo Shien Ng (M'99) received the B.Eng. and Ph.D. degrees from the Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, U.K., in 1999 and 2003, respectively. From 2003 to 2006, she was with the University of Sheffield and was responsible for characterization within the National Centre for III-V Technologies. She became a Royal Society University Research Fellow in October 2006 and her research interests include avalanche photodiodes, Geiger mode avalanche photodiodes, and material characterization.
    • Hui-Yun Liu received the Ph.D. degree from the Institute of Semiconductor, Chinese Academy of Sciences, Beijing, China, in 2001. In 2001, he joined EPRSC National Center for III-V Technologies, University of Sheffield, Sheffield, U.K. Since 2007, he is Royal Society University Research Fellow and a Senior Lecturer in University College London, U.K. His current research interests include the epitaxial growth III-V materials and related devices. He brings considerable experience to the research fields of nanometer scale engineering of low-dimensional semiconductor structures and development of state-of-the-art quantum-dot and quantum-well lasers via the application of novel epitaxy growth and device processing techniques. He has published more than 60 refereed international journal papers.
    • Mark Hopkinson received the B.Sc. degree in physics from the University of Birmingham, Birmingham, U.K., and the Ph.D. degree from the University of Sheffield, Sheffield, U.K. Currently, he heads the MBE activities of the National Centre for III-V Technologies, University of Sheffield, Sheffield, U.K. Earlier, he held a three-year research position at Warwick, and was then with the University of Minnesota, Minneapolis, and Marconi Ltd., Caswell, Northampton, U.K. His current research interests include the development of optoelectronic materials and includes more than 10 years of work on semiconductor quantum dot materials. He has published around 500 papers in the fields of semiconductor epitaxy and materials characterization.
    • John P. R. David (SM'96) received the B.Eng. and Ph.D. degrees in electronic engineering from the University of Sheffield, Sheffield, U.K. He joined the Central Facility for III-V Semiconductors, University of Sheffield, in 1985, where he was responsible for the characterization activity. In 2001, he joined Marconi Optical Components (now Bookham Technologies), Devon, U.K., before returning to a Faculty Position in the University of Sheffield in September 2002. He has authored or coauthored more than 250 papers published in various journals and conference proceedings, largely in the areas of III-V characterization, impact ionization, and avalanche photodiodes.
    • Tom J. Badcock received the M.Sc. degree in physics from the University of Bristol, Bristol, U.K., in 2001. He is currently working toward the Ph.D. degree in physics at the University of Sheffield, Sheffield, U.K., focusing on the optical spectroscopy of 1.3 m quantum-dot laser structures.
    • David J. Mowbray received the B.A. and D.Phil. degrees from Oxford University, Oxford, U.K., in 1984 and 1989, respectively. His D.Phil. work concerned the optical properties of InGaAs-InP quantum-well systems. From 1989 to 1990, he held an Alexander von Humboldt Fellowship at the Max Planck Institute for Solid State Research, Stuttgart, Germany. Since 1991, he has been a member of the Department of Physics and Astronomy, University of Sheffield, Sheffield, U.K. His current research interests include the development of InAs quantum-dot lasers, fundamental physical processes in InAs quantum dots and wide bandgap nitride-based quantum dots.
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