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Ji, Z; Linten, D; Boschke, R; Hellings, G; Chen, SH; Alian, A; Zhou, D; Mols, Y; Ivanov, T; Franco, J; Kaczer, B; Zhang, X; Gao, R; Zhang, JF; Zhang, WD; Collaert, N
Publisher: IEEE
Languages: English
Types: Unknown
Subjects: TK
We present a comprehensive study of ESD reliability (TLP) on planar nMOSFETs with In0.53Ga0.47As as the channel material. Two types of traps are found during ESD stress. They are formed through independent mechanisms: transient Ef-lowering induced pre-existing e-traps discharging in the gate stack and hot hole induced e-traps generation through impact ionization in the InP buffer. These two types of traps explain the observed walk-out of off-state channel leakage current as well as the two-stage current conduction phenomena in the TLP measurement. The generated e-traps are permanent and can introduce detrimental conduction current harmful to the device performance. By properly selecting the buffer material, these defects can be removed.
  • The results below are discovered through our pilot algorithms. Let us know how we are doing!

    • 8 1 [1] G. Yeap, "Smart mobile SoCs driving the semiconductor industry: Technology trend, challenges and opportunities," in IEDM Tech. Dig., 2013, pp. 1.3.1-1.3.8.
    • [2] K. J. Kuhn, "Considerations for Ultimate CMOS Scaling," IEEE Trans. Electron Devices, vol. 59, pp. 1813- 1828, 2012.
    • [3] A. Alian, M. A. Pourghaderi, Y. Mols, M. Cantoro, T.
    • Ivanov, N. Collaert, et al., "Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices," in IEDM Tech. Dig., 2013, pp. 16.6.1-16.6.4.
    • [4] S. Takagi and M. Takenaka, "High mobility CMOS technologies using III-V/Ge channels on Si platform," in Ultimate Integration on Silicon (ULIS), 2012, pp. 1-4.
    • [5] T. Hoshii, S. Lee, R. Suzuki, N. Taoka, M. Yokoyama, H. Yamada, et al., "Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation," J. Appl. Phys., vol. 112, pp. -, 2012.
    • [6] J. Franco, A. Alian, B. Kaczer, D. Lin, T. Ivanov, A.
    • Pourghaderi, et al., "Suitability of high-k gate oxides for IIIV devices: A PBTI study in In0.53Ga0.47As devices with Al2O3," in Proc. IRPS, 2014, pp. 6A.2.1-6A.2.6.
    • [7] T. J. Maloney and N. Khurana, "Transmission line pulsing techniques for circuit modelling of ESD phenomena," in EOS/ESD, 1985, pp. 49-54.
    • [8] Z. Ji, S. W. M. Hatta, J. F. Zhang, W. Zhang, J. Niblock, P. Bachmayr, et al., "A new technique for probing the energy distribution of positive charges in gate dielectric," in Microelectronic Test Structures (ICMTS), 2014 International Conference on, 2014, pp. 73-78.
    • [9] A. Polity and T. Engelbrecht, "Defects in electronirradiated InP studied by positron lifetime spectroscopy," Physical Review B, vol. 55, pp. 10480-10486, 04/15/ 1997.
    • [10] J. S. Brockman, L. Gao, B. Hughes, C. T. Rettner, M.
    • G. Samant, K. P. Roche, et al., "Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide," Nat Nano, vol. 9, pp. 453-458, 06//print 2014.
    • [11] M. Gurfinkel, J. S. Suehle, J. B. Bernstein, and Y.
    • Shapira, "Enhanced Gate Induced Drain Leakage Current in HfO2 MOSFETs due to Remote Interface Trap-Assisted Tunneling," in IEDM Tech. Dig., 2006, pp. 1-4.
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