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Ranjbar, Samaneh; Brammertz, Guy; Vermang, Bart; Hadipour, Afshin; Cong, Shuren; Suganuma, Katsuaki; Schnabel, Thomas; Meuris, Marc; da Cunha, A. F.; Poortmans, Jef (2017)
Publisher: WEINHEIM
Languages: English
Types: Article
Subjects: Cu2ZnSnSe4; interface passivation; kesterite solar cell; solution processed MoO3
In this study, an ultra-thin MoO3 layer synthesized by a solution-based technique is introduced as a promising interfacial layer to improve the performance of kesterite Cu2ZnSnSe4 (CZTSe) solar cell. Solar cells with 10nm of MoO3 between Mo rear contact and CZTSe had larger minority carrier life time and open-circuit voltage compared to the reference solar cells. Temperature dependent current density-voltage measurement indicated that the activation energy (E-A) of the main recombination is higher (approximate to 837 meV) in solar cells with MoO3 layer, as compared to conventional solar cells where E-A approximate to 770meV, indicating reduced interface recombination. A best efficiency of 7.1% was achieved for a SLG/Mo/MoO3/CZTSe/CdS/TCO solar cell compared to the reference solar cell SLG/Mo/CZTSe/CdS/TCO for which 5.9% efficiency was achieved. This project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No. 640868. This research is partially funded by the Flemish government, Department Economy, Science and innovation. This work is also funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT - Portuguese Foundation for Science and Technology under the project UID/CTM/50025/2013. This work is also supported by JSPS Core-to-Core Program, A. Advanced Research Networks. S. Ranjbar acknowledges the financial support of the Portuguese Science and Technology Foundation (FCT) through PhD grant SFRH/BD/ 78409/2011. B. Vermang acknowledges the financial support of the Flemish Research Foundation FWO (mandate 12O4215N). Cu2ZnSnSe4; interface passivation; kesterite solar cell; solution processed MoO3
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