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Publisher: Vysoké učení technické v Brně. Fakulta strojního inženýrství
Languages: Czech
Types: Unknown
Subjects: EBIC, solární článek, Schottkyho přechod, CVD, grafen, solar cell, Schottky junction, graphene
Táto bakalárska práca sa zameriava na štúdium rozhrania grafén/kremík nachádzajúcom sa na solárnom článku s grafénovou vrstvou. Toto rozhranie bolo študované pomocou metódy EBIC a Ramanovej spektroskopie. Solárne články s grafénovou vrstvou boli vyrobené použitím elektrónovej litografie, chemického leptania a grafénu vyrobeného metódou CVD. Práca popisuje výrobu solárnych článkov s grafénovou vrstvou, metódu EBIC meranú pomocou SEM-u a analýzu zmien rozhrania grafén/kremík zapríčinených osvietením elektrónovým lúčom pomocou Ramanovej spektroskopie. V teoretickej časti je popísaný p-n prechod a Schottkyho prechod na solárnom článku, grafén a jeho výroba, ako aj základy metódy EBIC. This bachelor thesis is dedicated to study of interface graphene-on-silicon located on solar cell with graphene layer. The interface was studied by EBIC method and Raman spectroscopy. Solar cells with graphene sheet was fabricated using electron litography, chemical etching and graphene made by CVD method. The thesis describes fabrication of solar cells with graphene layer, method EBIC measured on SEM and analysis of changes graphene-on-silicon interface caused by enlightenment electron beam by Raman spectroscopy. In theorethical part is described p-n junction and Schottky junction of solar cell, graphene and its fabrication, as well as EBIC method fundamentals. A
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